BD13916STU Allicdata Electronics
Allicdata Part #:

BD13916STU-ND

Manufacturer Part#:

BD13916STU

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 1.5A TO126
More Detail: Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Throu...
DataSheet: BD13916STU datasheetBD13916STU Datasheet/PDF
Quantity: 18254
1 +: $ 0.32130
10 +: $ 0.27594
100 +: $ 0.20614
500 +: $ 0.16197
1000 +: $ 0.12516
Stock 18254Can Ship Immediately
$ 0.35
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD139
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BD13916STU is a low-voltage, NPN, silicon epitaxial planar transistor (BJT). It is commonly used in power-supply applications, audio and video output amplifiers, and sound systems.

This transistor has a wide range of applications due to its relatively low collector-emitter saturation voltage, the Vce(sat), and the relatively low noise figures which it has. It can be used in the design of power supplies, audio amplifiers, audio-frequency output circuits and other kinds of analog circuits. On top of that, its low-noise operation makes it suitable for use in high-quality sound systems and systems operating at high frequencies.

The BD13916STU’s excellent thermal characteristics, stable hFE, and solid mechanical integrity allow it to stand up to many applications that require high power or large amounts of heat dissipation. Furthermore, its higher collector-base breakdown voltage and its lower base-emitter breakdown voltage make it convenient to work with a wider range of voltages.

In its operation, the BD13916STU’s NPN structure has a base that is connected to the emitter and collector. The emitter is connected to the power source, and the collector is connected to the load. When the current passing through the collector exceeds a certain amount, the transistor’s base voltage will fall, shutting off the current flow between the emitter and collector, and allowing a low collector-emitter voltage to be maintained.

By controlling the amount of current that passes through the base and the collector, it can be controlled for any purpose required. With this kind of control, the BD13916STU can be used for switching and amplifying applications. Its wide voltage and current ranges make it suitable for applications ranging from consumer electronics to automotive and industrial electronics.

In summary, the range of applications and the wide range of parameters that the BD13916STU possesses make it a widely used and accepted choice for consumer, industrial and automotive electronics. Its low Vce(sat) and low noise operation mean that it can be used in the design of power supplies, audio amplifiers and audio-frequency output circuits, while its higher collector-base breakdown voltage and lower base-emitter breakdown voltage make it a handy choice for working with a variety of voltages.

The specific data is subject to PDF, and the above content is for reference

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