Allicdata Part #: | BD135TG-ND |
Manufacturer Part#: |
BD135TG |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 1.5A |
More Detail: | Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Throu... |
DataSheet: | BD135TG Datasheet/PDF |
Quantity: | 996 |
1 +: | $ 0.37800 |
10 +: | $ 0.33201 |
100 +: | $ 0.25439 |
500 +: | $ 0.20110 |
1000 +: | $ 0.16088 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225 |
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The BD135TG is a single-transistor bipolar junction transistor (BJT) that is commonly used in electronic devices, such as digital and analogue circuits. It is a high-power device that can be used in a variety of applications. This article will discuss the BD135TG application field and working principle.
The BD135TG is a versatile transistor that can be used in a wide range of applications. It is typically used in amplifying circuits and switches, and is also suitable for power driver circuits and power controller circuits. This versatile transistor is also suitable for use in linear amplification circuits, audio amplifier circuits, inverting circuits, power supply control circuits, and other applications. In addition, the BD135TG is suitable for use in high-frequency switching applications.
The BD135TG is a NPN transistor with a maximum collector current of 2 A. It has a minimum gain of 40 and a maximum power dissipation of 700 mW. This transistor has a maximum collector-emitter voltage of 40 V and a maximum operating temperature of 125 ˚C. Furthermore, this transistor is ESD-protected for improved protection against electrical surges and spikes.
The working principle of the BD135TG is based on the principle of transistor action. It consists of three layers: the emitter, the base, and the collector. The emitter-base junction forms the primary circuit, while the collector-base junction forms the secondary circuit. In this transistor, current flows between the base and the emitter, and from the collector to the base. This current controls the flow of current in the collector circuit, which is proportional to the current flowing in the primary circuit.
In the BD135TG, the base current is controlled by the voltage applied to the base. When a positive voltage is applied to the base, the base current is increased, which increases the collector current. When the voltage applied to the base is negative, the base current is decreased, thus reducing the collector current. This allows the BD135TG to be used as an amplifier or switch, depending on the intended application.
In addition, the BD135TG has a reverse bias protection-diode feature which prevents the transistor from damage due to overvoltage. This feature is beneficial when used in power supply applications, as it helps to protect the device against accidental overloads. Furthermore, this transistor also includes a maximum surge rating, which prevents it from damage caused by ESD. This is especially beneficial when used in high risk applications.
The BD135TG is a versatile transistor that is suitable for a variety of applications, including high-power devices, linear amplifier circuits, audio amplifiers, inverting circuits, and power supply control applications. It is a low-cost device that is ESD-protected for improved protection against electrical surges and spikes. Its working principle is based on the transistor action principle and its base current is controlled by voltage. Finally, its reverse bias protection-diode feature helps prevent damage due to overvoltage.
The specific data is subject to PDF, and the above content is for reference
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