BD1366S Allicdata Electronics
Allicdata Part #:

BD1366S-ND

Manufacturer Part#:

BD1366S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 45V 1.5A TO-126
More Detail: Bipolar (BJT) Transistor PNP 45V 1.5A 1.25W Throu...
DataSheet: BD1366S datasheetBD1366S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD136
Description

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BD1366S is an NPN transistor commonly used in circuit designs. It is a single bipolar junction transistor, also known as an BJT, which has an NPN transistor structure. It has an industry rating of 65V and uses a “most-likely” output current of 600mA. Its production form is a leaded component, and its packaging is in a ceramic power transistor form.

BD1366S is most commonly used in power amplifier circuits, but it can also be used in other circuits such as audio amplifiers. The transistor amplifies current when it is powered. The output is larger than the input, which is why transistors are used as amplifiers. The BD1366S has good characteristics when combined with a transformer, which allows it to be used in power supply designs as a power amplifier.

The BD1366S has a gain bandwidth of 13MHz, which makes it suitable for high frequency applications. The transistor features a fast switching speed, making it ideal for controlling high speed signals. It also has a low threshold voltage, which makes it suitable for use in low power applications. The BD1366S also features a low collector-to-base capacitance, allowing for better signal integrity when operating at higher frequencies.

The BD1366S has a working principle of common-emitter amplification. The transistor is biased in such a way that the base-emitter junction is forward biased, while the collector-emitter junction is reverse biased. When a current is applied to the base, the junction is forward biased, and current flows through the collector-emitter circuit. The amplified current output is proportional to the amount of bias current applied to it.

The BD1366S can also be used in switching applications, as it can be rapidly switched between the on and off states. This makes it ideal for digital circuits, as it can be quickly turned on and off, allowing for fast data processing. The BD1366S also has a low threshold voltage, which reduces the amount of power needed to activate the transistor.

In conclusion, the BD1366S is a single bipolar junction transistor, which has an NPN structure, an industry rating of 65V, a gain bandwidth of 13MHz, and a “most-likely” output current of 600mA. It is commonly used in power amplifiers and audio amplifiers and can also be used in other current-amplifying circuits. Its working principle is common-emitter amplification, and it can also be used in switching applications.

The specific data is subject to PDF, and the above content is for reference

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