BD13616S

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The BD13616S Single Bipolar Transistor is a power BJT that is ideal for use in audio, radio frequency, and telecommunications systems. It can be used in switching applications as well as for power amplification. It is made with a monolithic substrate and has an emitter-base breakdown voltage of 66V. It also has a maximum collector-emitter voltage of 50V, a maximum collector current of 1A, and a maximum power dissipation of 625mW.

The BD13616S is a general-purpose NPN transistor with a maximum continuous drain current of 1A. The device can switch and amplify signals with a frequency range from DC to 7GHz. The BD13616S is designed for transistor amplifiers, drivers, and high-speed switching applications and is characterized by an Alpha (dc current gain) of 300 – 700 min-max and a minimum high frequency cut-off of 70MHz.

The BD13616S is designed to work in a wide range of ambient temperatures. This makes it particularly useful for a wide range of operating environments. The maximum operating temperature of the device is 125 °C and the thermal resistance from junction to ambient is 200 °C/W.

The BD13616S is also available in a variety of packages, including TO-220, SOIC, SMD, and die form. The device has an output capacitance of 20pF and a storage capacitance of 1nF. It is ideal for use in audio, radio frequency, and telecommunications systems.

The working principle of the BD13616S is based on the NPN transistor. This means that the transistor has two pPt and one Nt terminals. The emitter is connected to the Nt, the base to the pPt, and the collector to the other pPt. When a voltage is applied to the base, the transistor opens and allows current to flow from the collector to the emitter. When the voltage is removed, the transistor shuts off.

The BD13616S is used in a variety of applications such as audio amplifiers, radio frequency power amplifiers, switching applications, communication equipment, and industrial controls. The device is used in both active and passive circuits and is well-suited for power amplification and switching applications.

In conclusion, the BD13616S is a general-purpose NPN transistor suitable for a wide variety of applications. It is characterized by a high Alpha, low output capacitance, and a wide operating temperature range. The device is also available in multiple packages, making it suitable for a wide range of applications. The working principle of the device is based on the NPN transistor, allowing it to open and close when a voltage is applied to the base.

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