| Allicdata Part #: | BD13710STU-ND |
| Manufacturer Part#: |
BD13710STU |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 60V 1.5A TO-126 |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Throu... |
| DataSheet: |  BD13710STU Datasheet/PDF |
| Quantity: | 1539 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1.5A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 63 @ 150mA, 2V |
| Power - Max: | 1.25W |
| Frequency - Transition: | -- |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-126 |
| Base Part Number: | BD137 |
Description
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The BD13710STU is a bipolar junction transistor (BJT) that is single in function. It is a NPN device, which means it has an emitter, base, and collector, and electrical current can flow from the emitter to the collector through the base. This makes it a great choice for power supply and signal switching applications.The BD13710STU is a small signal transistor with a breakdown voltage (BVceo) of -30 volts. It has a collector-emitter saturation voltage typically less than 0.5 volts, making it an ideal choice for low voltage, low current applications. The device is capable of handling up to 200mA of collector current and can withstand a maximum of 30V in the collector. The device is designed for use in a range of applications where low voltage, low power, and high speed are important factors, such as small signal switching, audio amplifiers, oscillators, and logic drivers. The device has a low noise figure due to its low gain, allowing it to be used in noise-sensitive applications.The working principle of a bipolar junction transistor is relatively simple. The device consists of two diodes placed back-to-back. The two PN junctions opposite of one another form the transistor\'s following characteristics: forward base current bias, reverse base current bias, forward d.c. gain, reverse d.c. gain, and alpha-beta ratio. When the device is forward biased, a small current will flow between the emitter and base (IEB). This current will in turn create a larger current flow between the collector and emitter (ICE). This is known as base-emitter or forward bias. This is where most of the device\'s operation occurs due to the current going from the emitter to the collector. The device will only conduct current when the base is forward biased, otherwise it will be off.When the device is reverse biased, the current flow reverses and goes from the collector to the emitter. This is known as collector-emitter or reverse bias. This is the state in which the device is at rest. This low current flow helps increase the device\'s lifetime as it doesn\'t experience large amounts of current flow. The BD13710STU is a great choice for a variety of applications where a low voltage, low current, high speed, and low noise figure are important factors. This makes it an ideal choice for small signal switching, audio amplifiers, oscillators, logic drivers and other applications where these factors need to be considered.
The specific data is subject to PDF, and the above content is for reference
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