BD1376S Allicdata Electronics
Allicdata Part #:

BD1376S-ND

Manufacturer Part#:

BD1376S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 1.5A TO-126
More Detail: Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Throu...
DataSheet: BD1376S datasheetBD1376S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126
Base Part Number: BD137
Description

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The BD1376S is a single Bipolar Junction Transistor (BJT) that finds a wide range of applications. As a low-cost, low-power device, it is used to switch signals from one circuit to another and to boost the current passing through them. It is also used for amplification, noise filters, oscillators, switching, and many other applications.

The BJT is a three terminal semiconductor device that is made up of two pnp or npn layers. Depending on the type, the doping concentration will differ. The BD1376S is an npn BJT, meaning that its doping concentration will be higher in the n layer, while the p layer will have a lower doping concentration. The n layer is the emitter, while the p layer is the base.

The BD1376S has a maximum collector-base breakdown voltage of 45V. It has an operating current of 0.1mA and a maximum collector current of 70mA. It has a noise figure of 0.7dB and a group delay of 0.4ns. It has a maximum collector-emitter voltage of 40V and a maximum collector-emitter saturation voltage of 0.2V.

The BD1376S is a three-terminal electronic component that is used to switch and amplify signals. The base terminal controls the current flow between the emitter and collector terminals. Through the application of a small base current, the current flowing between the emitter and collector terminals can be controlled. When the base current is low, the current between the emitter and collector will be low. As the base current increases, the current between the emitter and collector will also increase. This process is known as gain. By controlling the amount of base current, the collector-emitter current can be increased or decreased. The gain of the BD1376S is typically between 25 and 75.

The BD1376S is commonly used in many applications such as amplifiers, switches, filters, oscillators, and many more. It is ideal for low power switching applications due to its low power consumption and low noise figure. It is also used in low-cost applications since it is a relatively inexpensive device. The BD1376S can also be used as a feedback amplifier in order to control the output of a circuit. It is also used in instrumentation amplifiers, which help in obtaining an accurate analog signal from a digital one.

In conclusion, the BD1376S is a low-cost, low-power single Bipolar Junction Transistor (BJT) that finds a wide range of applications. It is commonly used in amplifiers, switches, filters, oscillators and other circuits. Its maximum collector-base breakdown voltage is 45V and its operating current is 0.1mA. Its maximum collector current is 70mA, and its noise figure is 0.7dB. It has a maximum collector-emitter voltage of 40V and a maximum collector-emitter saturation voltage of 0.2V. With its low cost and low power consumption, the BD1376S is an ideal device for many applications.

The specific data is subject to PDF, and the above content is for reference

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