BD13610S

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	63 @ 150mA, 2V
Power - Max:	1.25W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126
Base Part Number:	BD136

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BD13610S is a PNP power transistor encompassed within a TO-220 package made from silicon material. It is designed for several applications including reverse cylinder and control, general purpose switching, and amplifier circuit operations. This NPN power transistor is categorized under the Transistors - Bipolar (BJT) - Single family.The power dissipation of this device is 10W and it exhibits a typical DC forward current gain of 80. The BD13610S also features an average transition frequency of 3 GHz, collector current of 10A, and maximum DC collector-emitter voltage of 60V. Its maximum operating temperature is 150 °C and its NPN type is suitable for Class AB applications.The BD13610S is commonly used in various applications such as reverse cylinder and control units, general purpose switching circuits, and amplifier circuitry. The device is also deployed in linear and switching operated power supplies, high current switching, and Class AB audio amplification. Unlike a PNP transistor, the NPN type of BD13610S is suitable for amplification since class A and B cannot be used in PNP type.The working principle of this power transistor is similar to any NPN transistor. The BD13610S has three legs, the collector, emitter, and base. The base is used to control the flow of current between the collector and the emitter. When the base receives no current, the flow of current between the collector and the emitter is blocked. When the base is given a current, it allows current to flow between the collector and the emitter and thus amplifies the signal.The collector and the emitter act as an inductor and an electron tube, respectively. Due to the inductor and electron mismatch, the collector current (Ic) is greater than the emitter current (Ie). The voltage between the emitter and the base controls the current flow through the collector-emitter terminations, resulting in transistor’s amplification.It is important to note that the BD13610S has a forward DC current gain that is continuous rather than a single, static value. The forward DC current gain of this transistor depends on the amount of current passing through the base. This means that the higher the amount of current passing through the base, the higher the forward DC current gain will be. As the collector current increases, the output impedance of the transistor also increases. This means that the higher the collector current, the greater the output impedance.The BD13610S power transistor is designed for high frequency operations, depending on the application. In Class AB amplifications, the majority carriers, i.e. holes and electrons, must be inverted during the transition of the signal. The BD13610S provides increased high frequency performance and better thermal stability, making it ideal for Class AB amplification and other related applications.To conclude, the BD13610S power transistor is a widely used device in various applications, thanks to its excellent performance characteristics. Its combination of a high DC current gain and high switching speed makes it an ideal choice for amplifier circuit operations, general purpose switching, and reverse cylinder and control units.

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