BD137

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The BD137 is a silicon NPN bipolar junction transistor (BJT) from one of the most widely renown and well known manufacturers of transistors, NXP Semiconductors. These NPN transistors are capable of delivering currents from 500mA to 1A at voltages from 40V to 80V, making them suitable for a variety of applications. In addition to their high current and voltage ratings, these transistors are also highly reliable, with their long lifetimes and long service lives in mind. The design and production of the BD137 transistors has been thoroughly tested and optimized in order to ensure that they provide users with a long-term, reliable and cost-effective solution.

The BD137 is used in a range of applications, among these are small signal amplification, radio and audio frequency amplifiers, switching circuits, and high frequency amplifiers. The BD137’s wide range of applications is made possible due to its characteristics, which include low noise, high gain, good punch-through properties and a high collector current. It is commonly found in both transistor amplifiers and switching networks, as well as being used as a voltage regulator in automotive electronics.

The working principle of a BD137 is relatively simple. As a NPN bipolar junction transistor, the BD137 consists of three layers of semiconductor material, with two electrical terminals connected to each layer. When current flows through the base of the transistor in a forward direction, the electrons within the base begin to move to the collector and emitter, thereby creating a minority-carrier region which allows current to flow across the base-collector junction, thus allowing the current to cross the junction and reach the collector. This process is known as a “forward biasing” of the junction. When a signal is applied to the base of the transistor in an opposite direction, electrons are attracted to the collector and no current can flow from the collector to the emitter, thereby turning off the transistor. This process is known as the “reverse biasing” of the junction.

The collector current is determined by the ratio of the collector current to the base voltage, which is known as the forward current gain, or ‘ß’. The higher this ratio is, the more current passes through the transistor’s collector and the greater the current, and as a result, BD137 transistors can provide an output current that is far greater than that of other types of transistor, making them ideal for medium to high-power applications. The BD137 transistors also have low reverse leakage current, which results in less power consumption in the circuit design.

The wide range of applications and features of BD137 transistors make them a popular choice for many electronics circuits, making them a great choice for many different applications. With their high current and voltage ratings, their reliability, and their low power consumption, BD137 transistors are an excellent choice for any electronic application.

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