BD139-16 Allicdata Electronics
Allicdata Part #:

497-12750-5-ND

Manufacturer Part#:

BD139-16

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 80V 1.5A SOT32
More Detail: Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Throu...
DataSheet: BD139-16 datasheetBD139-16 Datasheet/PDF
Quantity: 1000
1 +: $ 0.29610
10 +: $ 0.25074
100 +: $ 0.18743
500 +: $ 0.14728
1000 +: $ 0.11380
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: SOT-32-3
Base Part Number: BD139
Description

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Bipolar Junction Transistors (BJTs) are a type of semiconductor device commonly used as switches and amplifiers. The BD139-16 transistor is a type of BJT specifically designed for use as a switching device. In this article, we will discuss the application field and working principle of the BD139-16 transistor.

What Is the BD139-16 Transistor?

The BD139-16 is a general-purpose, NPN silicon power transistor. It is designed primarily for small-signal switching applications and is intended for a wide range of amplifier, high-speed switching, and other high-speed applications. The BD139-16 is available in packages with up to 16 pins. This makes it well suited for applications where space is restricted, such as audio and video circuits.

BD139-16 Application Field

The BD139-16 is suitable for use in various digital and analog circuits, including audio and video circuits, digital circuitry, linear applications, DC-DC converters and other power switching applications. It is suitable for use in a number of power switching circuits, such as DC-DC converters and Class D amplifiers. It is also suitable for use as an audio amplifier, an amplifier for instrumentation, an AC switch and an inverter circuit.

BD139-16 Working Principle

The BD139-16 is a NPN transistor and consists of three terminals, namely the emitter (E), base (B), and collector (C). When the base-emitter junction is forward biased, electrons in the emitter region migrate to the base region, forming a narrow region of high electron concentration known as the emitter space-charge layer. This layer then acts as a barrier to the passage of majority carriers, thus forming the depletion region between the base and the emitter. Minority carriers, however, can cross this region, modulating the current flow from the emitter, through the base and to the collector.

The current gain of the BD139-16 transistor is also important. The current gain is defined as the ratio of the output current to the input current. This ratio is called the beta (β) and is an important parameter in the design of BJT circuits. The BD139-16 has a typical β of 130 and a maximum beta of 140.

Conclusion

The BD139-16 is a general-purpose NPN silicon power transistor designed for use as a switching device. It is well suited for use in audio and video circuits, digital circuitry, linear applications, and DC-DC converters and other power switching applications. The BD139-16 has a typical current gain of 130 and a maximum current gain of 140. It also has a wide range of available packages, making it suitable for a variety of applications where space is limited.

The specific data is subject to PDF, and the above content is for reference

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