Allicdata Part #: | BD136GOS-ND |
Manufacturer Part#: |
BD136G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 45V 1.5A TO225AA |
More Detail: | Bipolar (BJT) Transistor PNP 45V 1.5A 1.25W Throu... |
DataSheet: | BD136G Datasheet/PDF |
Quantity: | 2890 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | BD136 |
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The BD136G is a silicon NPN epitaxial-base transistor for use in general-purpose amplifier and switching applications. It is rated at a maximum continuous collector current of 1 ampere (A) and can withstand continuous collector-emitter voltages up to 45 volts (V). The NPN transistor is a self-contained three-terminal device fabricated from a single piece of semiconductor material. It has a base terminal, an emitter terminal and a collector terminal that control the current flow through it.
The BD136G’s application field includes the amplification of high-frequency signals, oscillators, modulators, switches, and other transistor-based circuitry. It can also be used as a gate drive or driving amplifier in power circuits, such as inverters, converters, and power controllers. It is also suitable for use in automotive systems and other industrial applications.
The working principle of a BD136G transistor involves four main parts: The collector, the emitter, the base, and the substrate. The base controls the current flow between the collector and emitter. When a small current is applied to the base, electrons are allowed to flow from the substrate to the collector. The current then amplifies in the collector and then flows to the emitter. The electrons from the substrate move to the collector and then from the collector to the emitter. In this way, the small current applied to the base is amplified by the collector, and this amplified current is sent to the emitter.
The magnitude of the current amplification is determined by the current gain, which is typically labeled as hFE or α. This gain varies from transistor to transistor, but generally, the higher the current gain, the better the transistor. The BD136G transistor has a Gain Bandwidth Product (ft) of 10MHz and a minimum current gain of 50.
The BD136G transistor is packaged in the TO-126 case, which offers superior thermal and electrical characteristics. It is compatible with standard leaded and surface-mount technology, making it suitable for use in a variety of applications. The BD136G uses a shield lead to protect the collector lead, ensuring that the leads do not accidentally come in contact with other components in the circuit. This feature provides additional protection against over-temperatures, short circuits, and other possible threats to the circuit.
In summary, the BD136G is a versatile and reliable transistor for use in general-purpose amplifier, switching, and other transistor-based applications. It offers a maximum continuous collector current of 1A, and is rated for up to 45V collector-emitter voltages. It is packaged in the TO-126 case, and is compatible with both leaded and surface-mount technology. The Gain Bandwidth Product (ft) is 10MHz, and its minimum current gain is 50. The BD136G provides additional protection with its shield lead, making it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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