BD13716STU Allicdata Electronics
Allicdata Part #:

BD13716STU-ND

Manufacturer Part#:

BD13716STU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 1.5A TO-126
More Detail: Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Throu...
DataSheet: BD13716STU datasheetBD13716STU Datasheet/PDF
Quantity: 2623
Stock 2623Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Power - Max: 1.25W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Supplier Device Package: TO-126-3
Base Part Number: BD137
Description

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The BD13716STU is a single bipolar junction transistor (BJT) device, constructed using an NPN design. It is ideal for a wide variety of applications, such as switching and amplifier circuits for consumer, automotive, industrial, and medical electronic devices. This device features an integrated pre-bias resistor for internal bias of the PNP transistor and it also features a collector current rating of 500mA to make it suitable for high-current applications.

In terms of its external physical appearance, the BD13716STU is a 4-pin, surface-mounted device (SMT) package. The package measures in at 2.0mm x 1.5mm x 0.825mm, making it ideal for high-density printed circuit boards (PCBs).

The most common application for the BD13716STU is in switching circuits, particularly those where a quick response time is needed. It is also used in voltage regulators and amplifier applications, as well as in audio circuits. In switching applications, the BD13716STU is typically used to switch between two voltages, or between two logic states, such as “on” and “off”.

In terms of its working principle, the BD13716STU functions similarly to other bipolar junction transistors. It is a three-terminal semiconductor device, composed of three layers of semiconductor materials (N-type, P-type, and N-type), which are sandwiched together. When a positive voltage is applied to the base terminal (B) of the transistor, it creates a voltage difference between the base and the collector terminals. This voltage difference, known as Vbe, creates a flow of electrons from the base terminal to the collector terminal. This flow of electrons causes a current to flow, which can be used to switch other components on or off, or to amplify an input signal.

The BD13716STU also features an integrated pre-bias resistor, which is used to bias (or pre-charge) the collector before the base voltage is applied. This bias prevents excessive base current from flowing when the transistor is turned on and improves the switching time of the device.

Overall, the BD13716STU is an excellent choice for a wide range of switching, amplifier, and audio applications. It is a small and low-cost device, making it ideal for use in high-volume, consumer-grade electronic designs. Furthermore, its integrated pre-bias resistor and 500mA collector current rating make it suitable for even high-current applications.

The specific data is subject to PDF, and the above content is for reference

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