BD13510S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single

Bipolar junction transistors (BJT) are solid-state devices mainly used to amplify or switch electronic signals. The BD13510S is a high-end type of BJT manufactured by ROHM semiconductor intended for use in applications that require a high current gain, large voltage, and semiconductor device. This article will discuss the application field and working principle of the BD13510S.

Application field

The BD13510S is a transistor for high current amplification and suitable for consumer applications that require high output current and low saturation voltage. It is mainly used in audio amplifiers, motor drivers, and high-voltage detectors.

The BD13510S is suitable for general purpose amplifier use in consumer appliances such as televisions, video cameras, and audio equipment. It can drive a head amplifier or transducer with a powerful output current. It can also be used as a low-saturation logic switch in digital circuits.

The BD13510S can also be used in industrial control and instrumentation applications, such as controlling digital indicators, power supplies, amplifiers, and relays. It is used in load timing control applications, power switch applications, and analog signal control applications.

Working principle

The BD13510S is constructed from two transistors, an NPN transistor and a PNP transistor, arranged in a symmetrical manner. An NPN transistor consists of a base (B), collector (C) and emitter (E). The base voltage must be higher than the emitter voltage in order for current to flow. Similarly, a PNP transistor consists of a base (B), collector (C) and emitter (E). The emitter voltage must be higher than the base voltage in order for current to flow.

The Collector and Emitter terminals of the two transistors are connected together, creating a single junction between them. This junction is known as a BASE junction. When a voltage is applied to the BASE terminal, it modulates the base-emitter junctions of the two transistors, causing current to flow from the collector to the emitter. This current is amplified due the transistors’ high current gain. Depending on the type of application, the output current can be used to either amplify or switch a signal.

The BD13510S is a high-performance transistor that can achieve a high current gain over a wide range of operating conditions. It has a maximum current gain of 500, a maximum collector-emitter voltage rating of 30V, and a maximum collector current rating of 10A. These characteristics make the BD13510S an ideal choice for applications where high current gain and low saturation voltage is required.

Conclusion

The BD13510S is a high-performance bipolar junction transistor with a wide range of applications. It is suitable for use as amplifiers, logic switches and transducers, in consumer electronics, industrial control and instrumentation applications. The BD13510S has a high current gain, large voltage rating and low saturation voltage, making it an ideal choice for applications that require high current gain and low saturation voltage.

The specific data is subject to PDF, and the above content is for reference