Allicdata Part #: | BD1356S-ND |
Manufacturer Part#: |
BD1356S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 45V 1.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 45V 1.5A 1.25W Throu... |
DataSheet: | BD1356S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 2V |
Power - Max: | 1.25W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | BD135 |
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Bipolar Junction Transistors (BJT) are essential electronic components that can produce any type of logic functions on a printed circuit board. BD1356S is a high voltage, high power, NPN silicon transistor from Rohm Corporation Semiconductor. It is designed for linear power, audio frequency power amplifier and switching applications in automotive, consumer and industrial electronics.
The BD1356S is a single bipolar transistor with a microminiature low-profile outline, consisting of three leads; the emitter (E), the base (B) and the collector (C). It is equipped with a thin-film isolated substrate, helping it reach high breakdown voltage and low noise levels. As a result, this NPN transistor has a maximum collector current rated at 4A and a maximum power dissipation of 8W.
The BD1356S performs an amplification operation through the flow of current from its emitter to collector, activated by the base wire from the control input signal. The output signal is the current amplified by the ratio between the base current to the collector current. This ratio is known as hFE, which stands for "forward current gain". For example, considering the BD1356S, the hFE is usually between 10 to 30.
The BD1356S has a high-voltage capability of up to 400V, making it a suitable component for applications where high switching voltages are required. With its high amplifier gain and fast response, the BD1356S can also be used in analog switching and signal detection. As well, its low-noise, high-voltage and high-current features are desirable for audio power amplifier design, making it particularly popular in applications such as car audio and sound reinforcement systems.
The BD1356S also has a maximum power dissipation of 8W, making it a suitable component for applications with switching or linear power requirements. It is also capable of handling large currents and high power, so it can be used as a driver for many types of loads, such as motors, resistive and inductive loads. Furthermore, its isolation substrate construction allows it to provide good noise suppression and thermal breakdown protection. This makes it an ideal choice for applications that require high-frequency switching.
In conclusion, the BD1356S is an ideal component for a variety of audio and linear power amplifier applications. With its high-voltage, high-power and fast response, it can handle large currents and high power, allowing it to be used for switching and signal detection. The component is also equipped with a thin-film isolated substrate, providing it with good noise suppression and thermal protection. This makes it a suitable component for many audio power applications, such as car audio and sound reinforcement systems.
The specific data is subject to PDF, and the above content is for reference
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