Allicdata Part #: | BLF6G05LS-200RN,11-ND |
Manufacturer Part#: |
BLF6G05LS-200RN,11 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 24DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 1.4A 460MHz ~ 470MHz 24dB 40W ... |
DataSheet: | BLF6G05LS-200RN,11 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 460MHz ~ 470MHz |
Gain: | 24dB |
Voltage - Test: | 28V |
Current Rating: | 49A |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | LDMOST |
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The BLF6G05LS-200RN,11 is a transistor manufactured by NXP Semiconductors. It is a field-effect transistor (FET), more specifically a metal-oxide-semiconductor field-effect transistor (MOSFET), and further a radio-frequency (RF) transistor. Field-effect transistors are one of the most widely used types of transistors in digital and analog circuits. The BLF6G05LS-200RN,11 can be used in various applications, from low-power audio to high-power radio frequency amplifiers.
Due to its power-efficiency and low voltage noise, the BLF6G05LS-200RN,11 is highly suited for use in amplifiers used within the RF range, including Wi-Fi and Bluetooth receivers and transmitters. It is used for its robustness in both continuous and pulsed power conditions. The transistor also features high breakdown voltage, high stability and a low gate charge. The datasheet claims that the transistor has a voltage VGS between 10 and 20V, a voltage VDS of 150V, a Pd capacity of 25W, and a maximum frequency of 5GHz with an fmax of 3GHz.
The working principle of the BLF6G05LS-200RN,11 transistor is similar to other FET transistors. It is an on/off switch, and operates based on the electric current that passes between the source to the drain. The current is regulated by the gate-- when the gate voltage is increased or decreased, the current between source and drain will change accordingly. The current is determined by the junction between the source and the gate, called the "depletion region." When the gate voltage increases, the depletion regions become narrower, which decreases the resistance between the source and drain and increases current flow.
Though the BLF6G05LS-200RN,11 transistor is most commonly used for RF applications, it has uses in a wide range of applications. It can be used in high-frequency amplifiers, switches, oscillators, and filters. It is also useful in automotive applications, such as powertrain and engine sensors, as well as non-automotive applications such as lighting, lasers and solenoids. It is even used in some computer motherboards.
In summary, the BLF6G05LS-200RN,11 is a transistor manufactured by NXP Semiconductors. A FET, it is designed for use in radio frequency applications, from low-power audio to high-power radio frequency amplifiers. It works similarly to other FET transistors; it is an on/off switch and is regulated by the gate voltage. The transistor’s power-efficiency, low voltage noise and robustness make it suitable for a wide range of applications, from automotive to computer use.
The specific data is subject to PDF, and the above content is for reference
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BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
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