BLF6H10LS-160,118 Discrete Semiconductor Products

BLF6H10LS-160,118 is a type of transistor which lies within the category of Field Effect Transistors (FETs) or Metal Oxide Semiconductor FETs (MOSFETs) that are specifically designed to operate at radio frequency ranges. FETs are components which are distinctively composed of relatively thin layers of a semiconductor material and are known as either N-channel or P-channel FETs. N-channel FETs are mainly used for switching and controlling in applications, while P-channel FETs are mainly used for amplifying signals.

The BLF6H10LS-160,118 features a high power, low-loss, low noise, device with nominal drain current of 160mA and drain voltage of 118 volts. It has a low gate drive capability and a high level of linearity. The gate-drain and gate-source breakdown voltages are also excellent in this type of MOSFET. It is suitable for applications in a wide range of fields, including automotive, aviation and consumer electronics.

The working principle of the BLF6H10LS-160,118 is that it is a three-terminal FET where a voltage applied to the gate terminal sets up an electric field which modulates the conductivity of an N-channel between the source and drain. Generally speaking, the higher the gate voltage applied on the gate terminal, the higher conductivity between the drain and source will be achieved, and vice versa for lower gate voltage. This type of FET is usually used for switching and controlling applications because it has a low input capacitance and a high drain-source breakdown voltage as compared to other types of FETs.

The BLF6H10LS-160,118 also feature a gate threshold voltage, which is the minimum gate voltage that is needed in order to turn the FET on. A higher gate threshold voltage (V_t) is important because it means that the FET is more difficult to switch on and, therefore, more stable in its operation. The BLF6H10LS-160,118 has a relatively high gate threshold voltage and thus is ideal for applications where high levels of linearity and stability are required.

In summary, the BLF6H10LS-160,118 is an N-channel MOSFET that is suitable for use in radio frequency applications. It features high power, low-loss, and low noise. It is known for its low gate drive capability and high levels of linearity and stability. Due to its properties, it is applicable for use in a variety of field, from automotive and aviation to consumer electronics.