BLF6G10LS-200R,112

The BLF6G10LS-200R,112, a type of N-channel Enhancement-Mode Gallium Nitride (eGaN) Field-Effect Transistor (FET), is usually used in demanding radio-frequency (RF) applications, where efficiency and smaller size are the main requirements.

The FET is an ideal combination of low capacitance and high breakdown voltage, enabling a wide range of applications, from broadband amplifiers to low noise amplifiers and mixers. The FET is capable of providing high-efficiency and high-power conversion with its excellent RF performance.

The BLF6G10LS-200R,112 has a maximum gate-drain breakdown voltage of 200V and a maximum drain-source breakdown voltage of 10V. It also has a gate-source resistance of 2Ohms and a drain-source ON resistance of 6Ohms. It features an ultra-low input capacitance of 4.5fF and a low ON-state resistance (RDS[ON]) of 0.6 Ohms.

This FET also has a low thermal resistance of 200C/W and is capable of handling a large amount of current, up to 8A, with a maximum power dissipation of 8 mW. The FET is capable of providing excellent performance at frequencies up to 15GHz, making it ideal for high-frequency applications. It has very low noise figure and is extremely reliable due to its robust design.

The main application field of the BLF6G10LS-200R,112 is RF power amplifiers, as it offers excellent performance in terms of efficiency and size reduction. It is also suitable for a wide range of applications including wireless local area networks, microwave ovens, and satellite communications.

The working principle of the FET is based on the same principle as the junction field-effect transistor (JFET), where electrons are allowed to flow through a channel when a certain voltage is applied to the gate. As the voltage is increased, the resistance between the drain and the source decreases, and the current passing through the channel increases. Thus, the BLF6G10LS-200R,112 FET is used to control a large amount of current with relatively little effort.

In summary, the BLF6G10LS-200R,112 is a type of N-Channel Enhancement-Mode FET that offers excellent performance over a wide range of applications. It has excellent RF performance, very low input capacitance, low ON-state resistance, and high gate-drain breakdown voltage. It is ideal for RF power amplifiers, LNA, and satellite communications applications due to its high-efficiency and size reduction. It is based on the same principle as the common junction FET, where a certain voltage is applied to the gate to allow electrons to flow through the channel.