BLF6G38-50,135

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BLF6G38-50,135 Application Field and Working Principle

The BLF6G38-50,135 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high frequency and high power operation. This transistor is designed for highly efficient, high gain amplifier applications in the 800 MHz to 5000 MHz frequency range, and is ideal for base station and other high-power, high-performance devices. The BLF6G38-50,135 is part of NXP\'s BOLD+ GaN HEMT product family, and can deliver up to 5 watts at 4.43 GHz.

The BLF6G38-50,135 is optimized for wireless infrastructure applications, like telecommunication base stations, point-to-point radios, and point-to-multipoint radios, as well as radar and satellite communication systems, due to its wide bandwidth and superior linearity. Additionally, the device has a low noise figure of 1.2 dB and is optimized for use in other applications such as electronic warfare, avionics, cellular repeaters and distributed antenna systems (DAS).

This transistor’s working principle is based on the “Field Effect”, a type of transistor which is based upon the field of electric flux between the gate and the substrate. As voltage is applied to the gate, an electric field is created between the substrate and the gate which will cause an increase in the number of electrons in the channel. This increased number of electrons leads to increased current flow through the transistor, allowing the voltage at the drain to increase.

To increase the current flow even further, a positive bias voltage is applied to the gate. This changes the electric field in the channel and creates a positive voltage, or a “turn-on” effect, which increases the current flow even further. By controlling the amount of voltage applied to the gate, the amount of current flow can be controlled, allowing for precise control over power output.

NXP’s BLF6G38-50,135 GaN HEMT offers a full range of features that make it ideal for use in high frequency, high power applications. With its wide bandwidth, superior linearity, low noise figure, and high output power capabilities, this transistor is a solid choice for wireless infrastructure applications and other high-power, high-performance devices.

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