BLF6G10-160RN,112

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	922.5MHz ~ 957.5MHz
Gain:	22.5dB
Voltage - Test:	32V
Current Rating:	39A
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	32W
Voltage - Rated:	65V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST
Base Part Number:	BLF6G10

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BLF6G10-160RN is a N-Channel Enhancement Mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) which utilizes broadband, high power, high efficiency, and high linearity characteristics. The device is part of a broad offering of RF discrete components that includes a range of transistors, MMICs, amplifiers, switches, modulation controllers, and mixers.The BLF6G10-160RN has the following features: a maximum drain current of 8 A, a maximum drain-source voltage of 160 V, a maximum power dissipation of 250 W, a typical small signal gain of 10 dB, and a low noise figure of 1.2 dB. It is designed to operate over a broad frequency range (6-18 GHz), making it ideal for high frequency applications.The circuit diagram of the BLF6G10-160RN is shown below. The device consists of an input N-Channel Enhancement Mode Gallium Nitride (GaN) High Electron Mobility Field-Effect Transistor (HEMT), a drain-source power supply, and a common gate bias supply. In this device, the gate and drain terminals are of opposite polarity, which allows the current conduction to move in either direction. This allows the device to be used in both a linear or switching mode.

When used in switching mode, the gate/drain bias supply allows for the control of the on-and off-state currents of the device. In linear mode, the gate voltage is fixed at a certain level which allows for the adjustment of the drain-source voltage. This is ideal for low noise, high linearity applications such as the amplification of cellular traffic.The BLF6G10-160RN also offers excellent performance in electrical parameters, such as transmittance, suppression, isolation, and linearity. The transmittance of the device is typically greater than 16db and the suppression is greater than 28db at varied frequencies. In addition, the high isolation levels of the device make it suitable for use in multi-carrier systems.The BLF6G10-160RN is widely used in RF circuits, such as cellular base station front-end, military and aerospace, point-to-point microwave, microwave backhaul, and satellite communications. It is suitable for applications in the frequency range from 6-18 GHz and offers maximum power dissipation of up to 250 W.In conclusion, the BLF6G10-160RN is a N-Channel Enhancement Mode Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed to offer high linearity, high power, high efficiency, and wideband performance. The device is suitable for a variety of applications including cellular base station front-end and point-to-point microwave. It offers excellent electrical parameters such as transmittance, suppression, isolation, and linearity and has a maximum drain-source voltage of 160 V and maximum power dissipation of 250 W.

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