Allicdata Part #: | 568-8638-ND |
Manufacturer Part#: |
BLF6G10LS-200RN:11 |
Price: | $ 70.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 20DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 1.4A 871.5MHz ~ 891.5MHz 20dB ... |
DataSheet: | BLF6G10LS-200RN:11 Datasheet/PDF |
Quantity: | 97 |
1 +: | $ 63.74970 |
10 +: | $ 60.45800 |
100 +: | $ 54.69990 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 871.5MHz ~ 891.5MHz |
Gain: | 20dB |
Voltage - Test: | 28V |
Current Rating: | 49A |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G10 |
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BLF6G10LS-200RN:11 is a type of Transistor - FETs, MOSFETs - RF (Radio Frequency) device manufactured by NXP. By using a metal oxide semiconductor, it is capable of attenuating the frequency of a signal passing through it to a required level. The device is commonly used for microwave communication and general purpose amplifiers.
Application fields
BLF6G10LS-200RN:11 is a popular choice for RF applications due to its low cost and wide range of features. Some of its application fields include:
- RF Power Amplifiers
- Power Management in Cell Phones and GPS Systems
- Wireless Communication Systems
- Audio Modulators and RF Filters
- TV Broadcast Transmitters
- RF Local Oscillators
Working Principle
BLF6G10LS-200RN:11 consists of multiple parts including two layers of P+N - well doping, one layer of gate oxide, one layer of gate electrodes, one layer of contact and metallization, and two layers of surface connection. All these parts combine to form a single MOSFET device which can perform high-power switching and attenuation of signals. The working principle of BLF6G10LS-200RN:11 can be explained as follows.
The gate layer of BLF6G10LS-200RN:11 is a thin layer of N-type material which acts as the gate of the device. A voltage applied to this gate layer generates a strong electric field across the N-type material. This electric field attracts electrons to the gate layer, thus forming a conductive path between the source and the drain.
At the same time, a current flows through the gate oxide. This current is composed of both positive and negative charges. The positive charges move from the gate layer to the source and the negative charges move from the gate layer to the drain. The amount of current flowing through the gate oxide depends on the voltage applied to the gate layer.
By controlling the amount of current flowing through the gate oxide, the signal\'s frequency is attenuated. This is done by the transistor turning \'on\', allowing the signal to pass through or turn \'off\' stopping the signal. This allows control of signal levels at varying frequencies.
Conclusion
BLF6G10LS-200RN:11 is a type of transistor - FETs, MOSFETs - RF device which is mainly used for RF power amplifiers and wireless communication systems. It is capable of attenuating the frequency of a signal passing through it by controlling the amount of current flowing through the gate oxide. BLF6G10LS-200RN:11 is a cost-effective choice for most RF applications due to its wide range of features.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF6G15LS-40RN,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
BLF6G13L-250P,112 | Ampleon USA ... | 142.84 $ | 98 | RF FET LDMOS 100V 17DB SO... |
BLF6G27-10G,118 | Ampleon USA ... | 21.89 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF6G10LS-200RN:11 | Ampleon USA ... | 70.13 $ | 97 | RF FET LDMOS 65V 20DB SOT... |
BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF6G10-45,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
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