BLF6G10LS-160RN,11

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF6G10LS-160RN,11 is a type of Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), specifically designed for radio frequency (RF) applications. It is a lateral N-channel enhancement mode device, built with a very low resistive source and drain and lateral body current, giving it excellent RF performance. It has excellent gain, linearity, and low-noise characteristics. The BLF6G10LS-160RN,11 is ideal for use in RF power amplifiers, such as those used in cellular base stations, aerospace and defense systems, and other RF applications.

The transistor is built with a substrate that acts as a gate. The gate is connected to a voltage source, and in turn to the drain and the source. Current passes through the drain and the source, and when the gate is charged, the current passes between the two channels. This “current passing” is called junction capacitance, and the amount of current passing depends on the amount of applied voltage. During this process, the drain-to-source resistance is reduced, allowing more current to pass.

The BLF6G10LS-160RN,11 transistor has a gate-to-drain and gate-to-source voltage of 10 volts. It can handle high current operation, and its maximum voltage rating is 160 volts. The maximum on-state drain current is rated at 10 amps, with the gate-to-drain capacitance at 90 pF. Its maximum frequency rating is 20 GHz.

The BLF6G10LS-160RN,11 transistor offers many benefits for RF applications. Its high-current operation enables it to be used for high-power amplifiers, while its excellent linearity ensures low distortion. Its low noise characteristics make it ideal for applications that require low-noise performance. Its high-frequency rating makes it ideal for high-frequency applications such as cellular base stations.

In conclusion, the BLF6G10LS-160RN,11 is a specialized MOSFET transistor designed for RF applications. It is a lateral N-channel enhancement mode device, built with a low-resistive source and drain and lateral body current. It offers excellent gain, linearity, and low-noise characteristics, making it ideal for use in RF power amplifiers, such as those used in cellular base stations, aerospace and defense systems, and other RF applications.

The specific data is subject to PDF, and the above content is for reference