Allicdata Part #: | BLF6G27L-40P,118-ND |
Manufacturer Part#: |
BLF6G27L-40P,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 17DB SOT1121A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 450mA 2.... |
DataSheet: | BLF6G27L-40P,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 2.5GHz ~ 2.7GHz |
Gain: | 17.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 450mA |
Power - Output: | 12W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1121A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLF6G27 |
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The BLF6G27L-40P,118 is a field-effect transistor (FET) used in radio applications. It is also known as an enhancement mode GaAs MESFET. FETs are active devices that can be used in analog and digital applications where high linearity, low noise, low power consumption and fast switching speeds are required. This type of FET is commonly used in radio applications because its improved frequency response over other FETs, plus its higher power handling capabilities, make it ideal for radio applications.
The BLF6G27L-40P,118 is designed for operation in the VHF, UHF, and microwave radio frequency ranges. It is capable of working in frequencies up to 40GHz, which is much higher than many other transistors. The device\'s nominal power output levels range between 6dBm and 27dBm depending on the models and its collector current is rated at 18mA. It also features a breakdown voltage of 1.8V, gate current of 5nA, and gate impedance of 5Ω.
The working principle of the BLF6G27L-40P,118 can be described as follows. The device consists of a source, gate, and drain. When the gate voltage is applied, it creates an inversion region between the channel and the drain which cause the channel to become conducting. This region is known as the pinch-off region and it regulates the amount of current that can flow through the channel. The more negative the gate voltage the less current that can flow through the device. This makes FETs ideal for low-power applications and for controlling the amount of power output in radio applications.
The device also incorporates a self-biased circuit, which helps to ensure that the gate voltage is applied correctly even under varying levels of power. This helps to ensure the linearity of the device and allows it to work at a wide range of frequencies. The self-biased circuit also ensures that the FET is not damaged by excessive power as it limits the current to a safe level.
The BLF6G27L-40P,118 is ideal for a wide range of radio frequency applications. It offers high degree of linearity, low noise, and high power handling capabilities, making it perfect for radio applications such as base station, repeaters, mobile and handheld radios, radar systems, and satellite communications. It is also ideal for a wide range of consumer electronic applications including radio and television broadcasting, audio amplifiers, and communications systems.
The BLF6G27L-40P,118 is a reliable and cost-effective solution for high-speed radio frequency applications. Its wide temperature range, low noise and high power handling capabilities, and low gate impedance ensure that it is well-suited for a wide range of radio frequency applications. With its wide range of features and capabilities, the BLF6G27L-40P,118 makes an excellent choice for radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
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