BLF6G27L-40P,118 Allicdata Electronics
Allicdata Part #:

BLF6G27L-40P,118-ND

Manufacturer Part#:

BLF6G27L-40P,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT1121A
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 450mA 2....
DataSheet: BLF6G27L-40P,118 datasheetBLF6G27L-40P,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.5GHz ~ 2.7GHz
Gain: 17.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 450mA
Power - Output: 12W
Voltage - Rated: 65V
Package / Case: SOT-1121A
Supplier Device Package: LDMOST
Base Part Number: BLF6G27
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF6G27L-40P,118 is a field-effect transistor (FET) used in radio applications. It is also known as an enhancement mode GaAs MESFET. FETs are active devices that can be used in analog and digital applications where high linearity, low noise, low power consumption and fast switching speeds are required. This type of FET is commonly used in radio applications because its improved frequency response over other FETs, plus its higher power handling capabilities, make it ideal for radio applications.

The BLF6G27L-40P,118 is designed for operation in the VHF, UHF, and microwave radio frequency ranges. It is capable of working in frequencies up to 40GHz, which is much higher than many other transistors. The device\'s nominal power output levels range between 6dBm and 27dBm depending on the models and its collector current is rated at 18mA. It also features a breakdown voltage of 1.8V, gate current of 5nA, and gate impedance of 5Ω.

The working principle of the BLF6G27L-40P,118 can be described as follows. The device consists of a source, gate, and drain. When the gate voltage is applied, it creates an inversion region between the channel and the drain which cause the channel to become conducting. This region is known as the pinch-off region and it regulates the amount of current that can flow through the channel. The more negative the gate voltage the less current that can flow through the device. This makes FETs ideal for low-power applications and for controlling the amount of power output in radio applications.

The device also incorporates a self-biased circuit, which helps to ensure that the gate voltage is applied correctly even under varying levels of power. This helps to ensure the linearity of the device and allows it to work at a wide range of frequencies. The self-biased circuit also ensures that the FET is not damaged by excessive power as it limits the current to a safe level.

The BLF6G27L-40P,118 is ideal for a wide range of radio frequency applications. It offers high degree of linearity, low noise, and high power handling capabilities, making it perfect for radio applications such as base station, repeaters, mobile and handheld radios, radar systems, and satellite communications. It is also ideal for a wide range of consumer electronic applications including radio and television broadcasting, audio amplifiers, and communications systems.

The BLF6G27L-40P,118 is a reliable and cost-effective solution for high-speed radio frequency applications. Its wide temperature range, low noise and high power handling capabilities, and low gate impedance ensure that it is well-suited for a wide range of radio frequency applications. With its wide range of features and capabilities, the BLF6G27L-40P,118 makes an excellent choice for radio frequency applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BLF6" Included word is 40
Part Number Manufacturer Price Quantity Description
BLF6G27LS-75,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V SOT502BR...
BLF6G15L-250PBRN,1 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 18.5DB S...
BLF6G27LS-40P,118 Ampleon USA ... 48.23 $ 1000 RF FET LDMOS 65V 17DB SOT...
BLF6G21-10G,135 Ampleon USA ... 19.62 $ 1000 RF FET LDMOS 65V 18.5DB S...
BLF6G27L-40P,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 17DB SOT...
BLF6G38-10,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 14DB SOT...
BLF6G27-45,135 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 18DB SOT...
BLF6G22-180PN,135 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 17DB SOT...
BLF6G38S-25,118 Ampleon USA ... 45.62 $ 1000 RF FET LDMOS 65V 15DB SOT...
BLF6G10LS-160RN:11 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 22.5DB S...
BLF6G27-10,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 19DB SOT...
BLF6G27S-45,135 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 18DB SOT...
BLF6G20-180RN,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 17.2DB S...
BLF6H10L-160,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 104V 20DB SO...
BLF6G27L-50BN,118 Ampleon USA ... 50.17 $ 1000 RF FET LDMOS 65V 16DB SOT...
BLF6G10LS-135RN,11 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 21DB SOT...
BLF6G20LS-110,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 19DB SOT...
BLF6G10LS-160RN,11 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 22.5DB S...
BLF6G05LS-200RN,11 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 24DB SOT...
BLF6G20LS-75,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 19DB SOT...
BLF6G15L-250PBRN:1 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 18.5DB S...
BLF6G10-160RN,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 22.5DB S...
BLF6G20S-45,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 19.2DB S...
BLF647P,112 Ampleon USA ... 149.83 $ 2 RF FET LDMOS 65V 18DB SOT...
BLF6G20-45,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 19.2DB S...
BLF6G27L-50BN,112 Ampleon USA ... 53.94 $ 1000 RF FET LDMOS 65V 16DB SOT...
BLF6G15LS-500H,112 Ampleon USA ... 243.31 $ 1000 RF FET LDMOS 100V 16DB SO...
BLF6G10L-40BRN,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 23DB SOT...
BLF6G38-50,135 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 14DB SOT...
BLF6G27LS-135,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 16DB SOT...
BLF6G10LS-200R,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V SOT502BR...
BLF6G27LS-75,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V SOT502BR...
BLF6G10LS-200R,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V SOT502BR...
BLF6G22S-45,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 18.5DB S...
BLF6G10LS-200RN:11 Ampleon USA ... 70.13 $ 97 RF FET LDMOS 65V 20DB SOT...
BLF6G20-230P NXP USA Inc 0.0 $ 1000 IC BASESTATION FINAL SOT5...
BLF6H10LS-160,118 Ampleon USA ... 57.22 $ 1000 RF FET LDMOS 104V 20DB SO...
BLF6G15L-40BRN,118 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V 22DB SOT...
BLF6G27-100,112 Ampleon USA ... 0.0 $ 1000 RF FET LDMOS 65V SOT502AR...
BLF6H10L-300P Ampleon USA ... 0.0 $ 1000 RF FETRF Mosfet
Latest Products
MRF6S21050LR3

FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...

MRF6S21050LR3 Allicdata Electronics
MRF6S18060NR1

FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...

MRF6S18060NR1 Allicdata Electronics
MRF1550NT1

FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...

MRF1550NT1 Allicdata Electronics
MRF8S21100HSR3

FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...

MRF8S21100HSR3 Allicdata Electronics
LET16060C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16060C Allicdata Electronics
LET16045C

FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...

LET16045C Allicdata Electronics