BLF6G10L-40BRN,118

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The BLF6G10L-40BRN is categorized under Transistors - FETs, MOSFETs - RF due to its specified application and working principle. This FET is used to provide high frequency switching and amplification in radio frequency (RF) applications. It is ideal for various RF circuit designs such as filters, amplifiers, switches, transmitters, and receivers. It also has a wide range of applications in medical, military, industrial and consumer electronics.

The BLF6G10L-40BRN utilizes an N-channel, enhancement-mode depletion MOSFET, which operates on the principle of use of available drain-source voltage (V_DS). When there is forward bias between the gate and the source (V_GS), the electron flow to the drain is enhanced, thus allowing current to flow through the N-channel. The FET is designed to operate with low V_DS and V_GS, which keeps the frequency range low. This allows the FET to amplify, switch and suppress signals in the 1MHz to 500MHz frequency range.

The BLF6G10L-40BRN has a maximum drain current of 42mA at a Gate-Source Voltage V_GS of 10 volts. This can be increased by increasing V_GS. The drain is also capable of sinking up to 1750mA at a V_DS of 10 volts. The maximum power dissipation of the FET is 10 watts at V_DS of 10V. Due to its low forward voltage drop, the FET has a low operating temperature of 150˚C. The FET also has a high-density construction which helps it to achieve a very high frequency response.

The BLF6G10L-40BRN FET is an ideal choice for applications involving radio frequency (RF) amplification and switching. Its low power dissipation and low operating temperature make it an ideal choice for consumer electronics and industrial applications. Its high-density construction and high frequency response make it an ideal choice for a wide range of RF circuit designs. With its wide range of features and specifications, the BLF6G10L-40BRN is a cost effective and reliable choice for RF circuit designs.

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