BLF6G22S-45,112 Allicdata Electronics
Allicdata Part #:

BLF6G22S-45,112-ND

Manufacturer Part#:

BLF6G22S-45,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18.5DB SOT608B
More Detail: RF Mosfet LDMOS 28V 405mA 2.11GHz ~ 2.17GHz 18.5dB...
DataSheet: BLF6G22S-45,112 datasheetBLF6G22S-45,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 2.11GHz ~ 2.17GHz
Gain: 18.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 405mA
Power - Output: 2.5W
Voltage - Rated: 65V
Package / Case: SOT-608B
Supplier Device Package: CDFM2
Base Part Number: BLF6G22
Description

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The BLF6G22S-45,112 is a class of Field-Effect Transistors (FETs) that are used in radio-frequency (RF) applications. FETs are a type of transistor that uses electric fields to regulate the current flow through an electrical circuit. In this case, the BLF6G22S-45,112 is an insulated gate, FET that utilizes a gate and an insulated gate, to regulate the current flow. The gate in this particular transistor acts like a switch, and when current is applied to the gate, it will allow current to flow through the device.

The BLF6G22S-45,112 has a wide range of possible applications due to its relatively low cost, and its ability to handle a high amount of power. It is commonly used in radio frequency amplifiers, mixers, receivers, and transmitters. Additionally, it can be used in audio applications such as sound systems, or in industrial control systems, as well as other applications where high power and high performance are needed.

The working principle behind the BLF6G22S-45,112 is based on the fact that when a voltage is applied to the insulated gate, it creates an electric field between the gate and the source electrode. This electric field affects the way the electrons move, and in turn, alters the current flow through the device. When a voltage is applied to the gate, it attracts the electrons away from the source and pulls them towards the gate. This process is known as the electric field effect, and is the basis for the way that FETs operate. The gate voltage can be adjusted to control the current flow, making them well-suited for use in radio-frequency applications.

The BLF6G22S-45,112 is just one example of a FET or Field-Effect Transistor used in radio-frequency applications. There are many other types of FETs that are used in different types of electronics and applications. FETs are versatile components, and they are well-suited for use in both high- and low-power applications. Additionally, they can be used in both digital and analog systems, making them an ideal choice for a variety of projects.

The specific data is subject to PDF, and the above content is for reference

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