Allicdata Part #: | BLF6G27-45,135-ND |
Manufacturer Part#: |
BLF6G27-45,135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT608A |
More Detail: | RF Mosfet LDMOS 28V 350mA 2.7GHz 18dB 7W CDFM2 |
DataSheet: | BLF6G27-45,135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.7GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | 20A |
Noise Figure: | -- |
Current - Test: | 350mA |
Power - Output: | 7W |
Voltage - Rated: | 65V |
Package / Case: | SOT-608A |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLF6G27 |
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The BLF6G27-45,135 is a field-effect transistor (FET) and is part of a family of components known as radio frequency (RF) FETs. In contrast to most other transistors, the FET operates with a low voltage and no current, making it suitable for use with high frequency signals. The BLF6G27-45,135 is an N-channel FET which functions by allowing current to flow along a channel between two electrodes, or gates, when a voltage is applied. The FET is designed for use in radio frequency transmission applications, such as television transmitters and wireless communications equipment, and is capable of handling frequencies up to 8.2 GHz.
The BLF6G27-45,135 FET is primarily composed of three basic components: the source, drain and gate. The source is the negative terminal and the drain is the positive terminal. Current flows through the FET between the source and drain, which are connected by a “P-type” channel, meaning a decrease in voltage across the drain results in an increase in the current. The gate is the third component of the FET and consists of a metal layer between the source and drain, which acts as a switch to control the flow of current. The gate is usually connected to a control voltage, thus allowing the current to be regulated.
One of the main advantages of FETs over traditional transistors is their power efficiency, as FETs are able to operate with lower power draws than traditional transistors. FETs also allow for the design of power amplifiers for radio frequency signals with high linearity, as well as greater bandwidths. In addition to their uses in radio frequency applications, FETs are also used in integrated circuits and audio amplifiers, as they can reliably switch high current loads. Due to these advantages, FETs are increasingly being used in an ever wider range of applications.
The BLF6G27-45,135 FET is an important component in many radio frequency applications. Its main characteristics include a voltage gain of 10.2 dB at 8.2 GHz and a frequency response of around 10MHz-8GHz, as well as low noise figures, making it suitable for use in television transmitters, wireless communications equipment and other radio frequency applications. Its power efficiency, linearity and wide bandwidth make it an ideal component for modern high performance radio frequency applications.
In conclusion, the BLF6G27-45,135 is a radio frequency (RF) field-effect transistor (FET) which is ideal for use in television transmitters, wireless communications equipment, and other radio frequency applications. Its main characteristics include low noise, high linearity, and wide bandwidth, making it suitable for use in high performance applications. Additionally, its power efficiency and ability to switch high current loads make it an increasingly popular component in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF6G27-10G,118 | Ampleon USA ... | 21.89 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF6G10LS-200RN:11 | Ampleon USA ... | 70.13 $ | 97 | RF FET LDMOS 65V 20DB SOT... |
BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF6G10-45,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
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