BLF6G20S-45,118 Allicdata Electronics
Allicdata Part #:

BLF6G20S-45,118-ND

Manufacturer Part#:

BLF6G20S-45,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 19.2DB SOT608B
More Detail: RF Mosfet LDMOS 28V 360mA 1.8GHz ~ 1.88GHz 19.2dB ...
DataSheet: BLF6G20S-45,118 datasheetBLF6G20S-45,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.8GHz ~ 1.88GHz
Gain: 19.2dB
Voltage - Test: 28V
Current Rating: 13A
Noise Figure: --
Current - Test: 360mA
Power - Output: 2.5W
Voltage - Rated: 65V
Package / Case: SOT-608B
Supplier Device Package: CDFM2
Base Part Number: BLF6G20
Description

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The BLF6G20S-45,118 is one of the most popular and versatile field effect transistors (FET) available. It is most commonly used for radio frequency (RF) applications and can be used for a wide variety of circuitry requiring amplification and oscillator functions.

A FET is a three terminal device, usually made of semiconductor materials such as silicon. One terminal, known as the gate, is used to control the flow of current from the source to the drain, which are the other two terminals. This simple structure makes FETs ideal for use in analog and digital circuitry, particularly in applications requiring high input- and output- isolation, such as RF.

The BLF6G20S-45,118 utilizes a unique MOSFET structure with a low-noise gate. This ensures low-noise operation while maintaining high efficiency. It also has low power consumption and can operate at frequencies up to 40MHz. This makes it well suited for a range of applications, including audio, telecommunication, wireless communication, and industrial control.

The BLF6G20S-45,118 also features a built-in harmonic suppression filter for improved signal-to-noise ratio. This filter helps reduce or eliminate harmonic distortion that can occur in RF systems. It is also designed with a high-voltage tolerance, allowing it to be used in high-voltage applications. This makes the device especially useful in applications requiring high-efficiency power conversion.

The BLF6G20S-45,118 is also designed with a low-temperature-coefficient design for improved linear operation over a range of temperatures. This means that it will not vary as much with temperature variations, helping to ensure consistent performance. It also has a built-in reverse-contacter protection circuit which prevents any potential damage to the device during reverse-bias conditions.

Another advantage of the BLF6G20S-45,118 is that it is designed to meet certain standards for industrial applications, such as the IEC60335-1, IEC60335-2, and EN55022 standards. This makes the device suitable for use in industrial and transport applications where there is a need for compliance with applicable safety and emission requirements.

In summary, the BLF6G20S-45,118 is a versatile and highly efficient MOSFET device. It has a range of features, including low-noise operation, low power consumption, high-voltage tolerance, and harmonic suppression. This makes it ideal for applications requiring amplification and oscillator functions, particularly in RF systems. Additionally, it meets certain standards for industrial and transport applications, making it a valuable choice for these environments.

The specific data is subject to PDF, and the above content is for reference

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