Allicdata Part #: | BLF6G10LS-260PRN:1-ND |
Manufacturer Part#: |
BLF6G10LS-260PRN:1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 22DB SOT539B |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 1.8A 917... |
DataSheet: | BLF6G10LS-260PRN:1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 917.5MHz ~ 962.5MHz |
Gain: | 22dB |
Voltage - Test: | 28V |
Current Rating: | 64A |
Noise Figure: | -- |
Current - Test: | 1.8A |
Power - Output: | 40W |
Voltage - Rated: | 65V |
Package / Case: | SOT539B |
Supplier Device Package: | SOT539B |
Base Part Number: | BLF6G10 |
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BLF6G10LS-260PRN:1, also known as “RF MOSFET”, is a field effect transistor that functions as an electronic switch in electronic circuits. It is mainly used in radio frequency (RF) applications, such as digital TV, radio transmission, mobile internet/networking services, etc.
Application Field
BLF6G10LS-260PRN:1 MOSFETs are mainly used in radio frequency (RF) applications, thanks to its high frequency (up to 10GHz) operation and low noise. Other features of BLF6G10LS-260PRN:1, such as high breakdown voltage, low gate-source capacitance, and low gate-drain capacitance, make it suitable for RF applications. Some of its popular applications are as follows.
- Digital TV: Here, it acts as an amplifier between the signal receiver and the TV output.
- Radio Transmitters and Receivers: It is used to amplify the signal between the antenna and the receiver.
- Mobile Internet/Networking Services: It is used to amplify the signal between the base station and the router.
Working Principle
BLF6G10LS-260PRN:1 MOSFETs work by controlling the amount of current flowing through them based on the amount of voltage applied. The voltage is called a gate voltage, and is applied on the gate of the MOSFET. When a gate voltage is applied, it creates an electric field that attracts mobile electrons from the source terminal to the drain terminal, thus allowing current to flow from source to drain. The current will then flow from drain to source when the gate voltage is removed.
Depending on the size of the gate voltage and the type of MOSFET, the current that flows through the device can be varied. The gate voltage can either increase or decrease the current - this is known as the bias point of the MOSFET. With increasing gate voltage, the current will increase until it reaches the saturation point (maximum current).
Conclusion
In conclusion, BLF6G10LS-260PRN:1 MOSFETs are ideal for radio frequency (RF) applications due to their high frequency (up to 10GHz) operation and low noise capabilities. Additionally, they are also capable of producing varied levels of current based on the size of the applied gate voltage. BLF6G10LS-260PRN:1 MOSFETs can therefore be used in a variety of RF applications such as digital TV, radio transmission, mobile internet/networking services, and more.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
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BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
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BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
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BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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