BLF6G27-10GHJ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.5GHz ~ 2.7GHz
Gain:	19dB
Voltage - Test:	28V
Current Rating:	3.5A
Noise Figure:	--
Current - Test:	130mA
Power - Output:	2W
Voltage - Rated:	65V
Package / Case:	SOT-975C
Supplier Device Package:	CDFM2

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BLF6G27-10GHJ Application Field and Working Principle

The BLF6G27-10GHJ is a high power, N-channel MOSFET, which is widely used for radio frequency applications because it offers low distortion, low noise and high gain performance. It is a polycrystalline field-effect transistor developed by Renesas Technology.The BLF6G27-10GHJ is a MOSFET with a drain current of 20A and a drain source voltage of 10V when used in a grounded source configuration. It is targeted at high frequency applications such as radio frequency power amplifiers, broadband switches, and radio receivers which require a low noise, high gain performance from the circuit. The device has a minimum gate voltage of 3V and a maximum gate voltage of 12V. This ensures that the device can be used in a variety of applications.The BLF6G27-10GHJ is manufactured using a gate oxide with a thickness of 15 nm, which helps in reducing the amount of noise present in the circuit. Additionally, the device features a C3-C2 (capacitance-to-gate capacitance ratio) of 16:1, which helps in providing low distortion and a fast switching speed. The maximum drain-source voltage (Vds) of the device is 10V and the maximum drain current (Id) is 20A. This enables the device to be used in high power applications.The working principle of the BLF6G27-10GHJ is similar to that of a typical MOSFET. When a gate voltage is applied across the gate source, it attracts electrons onto the gate, which forms a conducting channel between the source and drain. This results in a current flow between the source and drain. The current flow can be controlled by adjusting the gate voltage, thereby enabling low noise, high speed operation.The BLF6G27-10GHJ is a versatile MOSFET that can be used in a variety of radio frequency applications. It is suitable for radio frequency power amplifiers, radio receivers, and broadband switches due to its low noise performance, high gain, and fast switching speed. Additionally, the device’s wide range of operating voltage and current enables it to be used in a variety of power applications.

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