BLF888DU

BLF888DU is an enhancement type dual N-Channel RF MOSFET transistor which is developed for general purpose RF amplification and switching applications. BLF888DU is fabricated using advanced design rules to minimize parasitic capacitance and improve the switching characteristics. BLF888DU can operate up to 100V drain source voltage and with a maximum gate threshold voltage of 1.1V. The DC current gain of BLF888DU is 21A/V and and can be used for a wide range of radio frequencies radio frequencies applications.

Applications:

• RF and microwave power amplifiers
• Broadband switching and driver circuits
• Low noise amplifiers
• Industrial grade telecom systems
• Wireless systems

Working Principle:

BLF888DU is a dual N-channel RF MOSFET with the source and gate terminals connected internally and acting as a single transistor. Its widely spaced source and drain ports are connected to separate elements of the circuit, allowing for two amplifying circuits working at different frequencies. The two amplifier paths separated by the body of the transistor offer good isolation between the input and output circuits. Moreover, the dual N-channel TFET provides matched performance across the two ports.

The drain current flow is controlled by the gate voltage, making it possible to make very precise voltage and current adjustments. Since the PFET can operate at a low gate drive level and low power consumption, the BLF888DU can provide high gain and a wide frequency range. The BLF888DU\'s high off-state blocking voltage and minimal channel on-state resistance make it the preferred choice for use in high power applications.

BLF888DU\'s design ensures a higher breakdown voltage and improved linearity, making it well suited for applications such as RF and microwave power amplifiers, low noise amplifiers, industrial grade telecom systems, as well as wireless systems. Finally, its wide VDS operating range and drain current capability also make it ideal for high power applications.