BLF8G27LS-100V,112 Allicdata Electronics
Allicdata Part #:

1603-1142-ND

Manufacturer Part#:

BLF8G27LS-100V,112

Price: $ 45.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT1244B
More Detail: RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 17dB 25W...
DataSheet: BLF8G27LS-100V,112 datasheetBLF8G27LS-100V,112 Datasheet/PDF
Quantity: 1000
1 +: $ 41.67450
10 +: $ 39.14690
100 +: $ 35.10590
Stock 1000Can Ship Immediately
$ 45.84
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.5GHz ~ 2.7GHz
Gain: 17dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 900mA
Power - Output: 25W
Voltage - Rated: 65V
Package / Case: SOT-1244B
Supplier Device Package: CDFM6
Base Part Number: BLF8G27
Description

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FETs, or field effect transistors, are an important electronic component for many applications, including radios, microwave amplifiers, and antenna control systems. The BLF8G27LS-100V,112 is a unique radio frequency (RF) FET from Empower RF, specifically engineered for communications infrastructure applications. This article will discuss the application field and working principle of this special FET.

Application Field

The BLF8G27LS-100V,112 is designed for high-power, high-frequency applications, perfect for use in both communications infrastructure and commercial systems. It is specifically designed to offer improved integration capability at lower DC currents when compared to other FETs. It offers excellent stability and reliability while providing maximum operating efficiency. This FET is suitable for TV and Broadband MATV systems, as well as satellite communication systems and cellular base stations.

Working Principle

To understand how this FET works, we must first understand the basics of FETs. FETs are transistors that use electric fields to control current flow through a semiconductor material. In the BLF8G27LS-100V,112, the source and drain are connected to a voltage source, and the gate is connected to the drain. When a small electric field is applied to the gate, it modifies the resistance between the source and drain and allows current to flow through.

FETs have high-frequency and power capabilities, making them perfect for use in RF systems. The BLF8G27LS-100V,112 has a frequency range of 825-2700 MHz, and is capable of handling power levels up to 100W with a peak gain of more than 20dB. It has a maximum efficiency of 80%, making it extremely energy efficient.

In addition to its impressive power and frequency capabilities, the BLF8G27LS-100V,112 has a number of other attractive features. It is highly reliable and requires minimal maintenance, and it has a wide operating temperature range, making it perfect for use in a variety of environments. It also has a low insertion loss, making it ideal for use in high-frequency applications.

Conclusion

The BLF8G27LS-100V,112 is a unique RF FET from Empower RF that is perfect for high-power, high-frequency applications. It has an impressive frequency range of 825-2700 MHz and can handle power levels up to 100W. It offers excellent stability and reliability, as well as maximum operating efficiency and a low insertion loss. It is highly reliable and requires minimal maintenance, making it perfect for use in both communications infrastructure and commercial systems.

The specific data is subject to PDF, and the above content is for reference

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