Allicdata Part #: | 568-12789-2-ND |
Manufacturer Part#: |
BLF8G27LS-100J |
Price: | $ 38.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 17DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.5GHz ~ 2.7GHz 17dB 25W... |
DataSheet: | BLF8G27LS-100J Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 35.10590 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.5GHz ~ 2.7GHz |
Gain: | 17dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 25W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF8G27 |
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BLF8G27LS-100J Application Field and Working Principle
The BLF8G27LS-100J is a type of field-effect transistor (FET) used in radio frequency (RF) applications. It is part of the PHEMT FET family, which stands for pseudomorphic high-electron mobility transistors.
FETs are components commonly used in the world of electronics, particularly in the RF world. They are versatile and offer a wide range of features. FETs have been around since the 1950s and have made quite an incredible journey ever since. There is a wide variety of FETs available in the market, although some of them are limited to very specialized applications. The BLF8G27LS-100J FET falls within the PHEMT family and is designed to meet the highest performance standards.
The BLF8G27LS-100J is a three-terminal transistor that uses an insulated gate to control the flow of current between the two other terminals. It is based on an inverted layered structure which allows it to have excellent performance and low noise figures. As with other FETs, the gate voltage controls the on/off state of the channel, as well as its resistance. When the gate voltage is applied, it creates a wide channel between the two other terminals, allowing current to flow freely. When the gate voltage is removed, the channel collapses, blocking any current from flowing through.
The BLF8G27LS-100J is mostly used for high-gain, high-linearity and low-noise amplifier applications. It is one of the most popular PHEMT FETs due to its low noise, high-power handling capability and low-temperature stability. It can also be used in wireless applications, such as in Wi-Fi networks, as it features low noise characteristics and high gain figures. Another popular application for the BLF8G27LS-100J is in medical instrumentation, due to its non-hybrid structure, which provides more reliable and accurate results.
Overall, the BLF8G27LS-100J is an advanced FET designed with high-performance standards in mind. It is highly versatile, providing excellent performance and low-noise figures. It can be used for a variety of applications, including in wireless networks, medical instrumentation, and other high-gain, high-linearity amplifiers. As with all FETs, the BLF8G27LS-100J requires proper handling and is highly sensitive to temperatures, so it should be used in an environment that is temperature-controlled and monitored.
The specific data is subject to PDF, and the above content is for reference
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BLF8G20LS-400PGVQ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 19DB SOT... |
BLF8G09LS-400PWU | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 20.6DB S... |
BLF8G09LS-400PGWQ | Ampleon USA ... | 60.28 $ | 53 | RF FET LDMOS 65V 20.6DB S... |
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