BLF8G38LS-75VU

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	3.4GHz ~ 3.6GHz
Gain:	15.5dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	600mA
Power - Output:	20W
Voltage - Rated:	65V
Package / Case:	SOT-1239B
Supplier Device Package:	CDFM6

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<div class="heading">Transistors - FETs, MOSFETs - RF</div><div class="content"><p>The BLF8G38LS-75VU is an enhancement mode N-channel GaN HEMT (high electron mobility transistor) RF power transistor. This type of transistor is a semiconductor, predominantly used in RF applications such as amplifiers, and requires only a small current to control its operation. The BLF8G38LS-75VU is designed for general-purpose broadband amplifiers, designed to remain both stable and linear over an extended temperature range, and can provide significant gains with up to 75V of drain-source voltage.</p><p>The BLF8G38LS-75VU is highly efficient and is able to produce high power and high frequency power amplification. It utilises specialised material Gate Oxides, created by Epi materials and processes, which are designed to reduce noise and maintain high gain.</p><p>The BLF8G38LS-75VU is able to operate with gate impedances as low as 3Ω, drastically reducing the need for additional gate-drive components, making it a great choice for most power amplifier circuits. It is capable of providing up to 2Watts of power at frequencies of up to 4 GHz, meaning that the BLF8G38LS-75VU can accommodate various applications, ranging from the low-end mobile equipment needs to the high-end requirements of joint military projects.</p><p>The BLF8G38LS-75VU has two main application fields:</p><ul><li>Broadband Wireless Communication (e.g. WiFi and WiMax)</li><li>Radiofrequency amplifiers (RF)</li></ul><p>The working principle behind the BLF8G38LS-75VU is an enhancement mode N-channel GaN HEMT. This means that it works with an N-type semiconductor to amplify a signal by providing an increased current source. Normally, an N-type semiconductor can not conduct electricity as it requires a certain voltage to be applied (called the \'threshold voltage\'). With an enhancement mode type HEMT, when the gate voltage crosses the threshold, the device operates in either the on or off state. The BLF8G38LS-75VU is designed to turn fully on or off with a 1v gate voltage, meaning that it can be accurately adjusted by varying the gate voltage.</p><p>The BLF8G38LS-75VU is an innovative transistor with some of the most advanced features available for RF power amplification. It is capable of providing excellent performance for both broadband wireless communication and radiofrequency amplifiers, with a wide range of application fields.</p></div>

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