BLF8G22LS-200GVJ

BLF8G22LS-200GVJ is a field effect transistor (FET) designed specifically for use in radio-frequency (RF) applications. The device has a maximum operating frequency of 2 GHz and a maximum power rating of 10W. It employs GaN-on-SiC process technology, which enables superior performance under extreme temperatures and radiation environments.The BLF8G22LS-200GVJ is a N-Channel enhancement mode MOSFET. The transistor is constructed with a drain and source region of silicon, insulated from the substrate and from each other by a heavily-doped N-type epitaxial silicon layer. The gate region consists of a heavily-doped N-type gate oxide layer, a P+ buried gate layer, and a thin oligopoly gate layer. The device features an extended gate current capability and an improved on-resistance profile. The improved on-resistance profile is attributed to the use of an advanced self-aligned process that ensures tight control of the gate geometry over the drain and source regions.When a bias voltage is applied to the gate of the BLF8G22LS-200GVJ, a thin inversion layer is formed in the area between the drain and source. This thin inversion layer is called the "channel" and is responsible for the conduction of current between the drain and source terminals. As the applied gate voltage increases, the channel becomes shorter and the current between the drain and source increases. This effect is referred to as "enhancement" mode as the current is enhanced by an increase in gate voltage.The operation of the BLF8G22LS-200GVJ is based on the principle of majority carrier injection. When the gate voltage is below the threshold voltage (Vt), the channel is closed and no current can flow between the drain and source. As the gate voltage increases above Vt, a carrier is injected into the channel and carries current from the source to the drain. As the gate voltage continues to increase, more carriers are injected into the channel and the current is increased. The maximum current that can be carried by the device is known as the “saturation current.”The BLF8G22LS-200GVJ has a wide range of applications in applications such as automotive, consumer electronics, communications, and defense. It can be used as a switch for controlling high-frequency signals due to its high switching speed, low on-resistance, and low gate threshold voltage. It is also suitable for use in high-power switching and in applications that require extremely low switching losses and high power density.In summary, the BLF8G22LS-200GVJ is an N-channel enhancement mode MOSFET designed specifically for RF applications. It features an extended gate current capability and an improved on-resistance profile. The device is suitable for applications such as automotive, consumer electronics, communications, and defense. The device is ideal for use as a switch due to its high switching speed, low on-resistance, and low gate threshold voltage. The device\'s ability to carry a high saturation current and its excellent RF performance make it an ideal choice for high-power switching applications that require extremely low losses and high power density.

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BLF8G22LS-310AVU	NXP USA Inc	0.0 $	1000	IC TRANS LDMOS 140W ACC-8...
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BLF898SU	Ampleon USA ...	216.71 $	27	RF MOSFET LDMOS 50V SOT53...
BLF8G22LS-200V,118	Ampleon USA ...	49.34 $	1000	RF FET LDMOS 65V 19DB SOT...
BLF8G27LS-100J	Ampleon USA ...	38.61 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF8G20LS-140VU	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18.5DB S...
BLF888BS,112	Ampleon USA ...	157.05 $	126	RF MOSFET LDMOS DUAL 50V ...
BLF8G27LS-100V,112	Ampleon USA ...	45.84 $	1000	RF FET LDMOS 65V 17DB SOT...
BLF8G24LS-100GVJ	Ampleon USA ...	38.61 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF8G22LS-310AVJ	NXP USA Inc	0.0 $	1000	IC TRANS LDMOS 140W ACC-8...
BLF888DU	Ampleon USA ...	165.33 $	1000	RF FET LDMOS 104V 21DB SO...
BLF8G27LS-100PJ	Ampleon USA ...	0.0 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF8G22LS-270V,118	Ampleon USA ...	57.55 $	1000	RF FET LDMOS 65V 17.3DB S...
BLF8G22LS-205VJ	Ampleon USA ...	45.67 $	1000	RF FET LDMOS 65V 18.3DB S...
BLF8G24LS-100VJ	Ampleon USA ...	38.5 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF8G10LS-270V,112	Ampleon USA ...	53.05 $	1000	RF FET LDMOS 65V 19.5DB S...
BLF8G20LS-160VU	Ampleon USA ...	45.74 $	1000	RF FET LDMOS 65V 20DB SOT...
BLF8G22LS-200GVJ	Ampleon USA ...	49.34 $	1000	RF FET LDMOS 65V 19DB SOT...
BLF8G20LS-200V	Ampleon USA ...	--	1000	RF FETRF Mosfet LDMOS 28V...
BLF8G10LS-270GVJ	Ampleon USA ...	45.67 $	100	RF FET LDMOS 65V 19.5DB S...
BLF8G19LS-170BVU	Ampleon USA ...	53.05 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF8G27LS-140,112	Ampleon USA ...	53.33 $	40	RF FET LDMOS 65V 17.4DB S...
BLF8G22LS-140U	Ampleon USA ...	44.75 $	49	RF FET LDMOS 65V 18.5DB S...
BLF8G27LS-150VJ	Ampleon USA ...	45.67 $	1000	RF FET LDMOS 65V 18DB SOT...
BLF8G22LS-240J	Ampleon USA ...	57.55 $	1000	RF FET LDMOS 65V 19DB SOT...
BLF8G22L-160BV,118	NXP USA Inc	0.0 $	1000	TRANSISTOR CDFM6RF Mosfet...
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BLF8G24LS-100VU	Ampleon USA ...	45.7 $	60	RF FET LDMOS 65V 18DB SOT...
BLF8G20LS-400PVQ	NXP USA Inc	0.0 $	1000	TRANS RF 400W LDMOS CDFM8...
BLF8G38LS-75VJ	Ampleon USA ...	45.67 $	1000	RF FET LDMOS 65V 15.5DB S...
BLF8G20LS-400PGVQ	Ampleon USA ...	60.28 $	60	RF FET LDMOS 65V 19DB SOT...
BLF8G22LS-240U	Ampleon USA ...	61.87 $	1000	RF FET LDMOS 65V 19DB SOT...
BLF8G20LS-400PVU	Ampleon USA ...	60.28 $	105	RF FET LDMOS 65V 19DB SOT...
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