Allicdata Part #: | BLF8G20LS-140GVQ-ND |
Manufacturer Part#: |
BLF8G20LS-140GVQ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18.5DB SOT1244B |
More Detail: | RF Mosfet LDMOS 28V 900mA 1.81GHz ~ 1.88GHz 18.5dB... |
DataSheet: | BLF8G20LS-140GVQ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.81GHz ~ 1.88GHz |
Gain: | 18.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 35W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1244B |
Supplier Device Package: | CDFM6 |
Description
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BLF8G20LS-140GVQ is a relatively recent advance in the discrete transistor market. Specifically, it belongs to a type of transistor known as a Field Effect Transistor, and it is designed for radio frequency applications. Despite this designation, it is also a versatile and effective tool for many engineering challenges, including amplifying signals, controlling currents and voltages, and providing isolation between different circuits.The basic operation of the BLF8G20LS-140GVQ follows that of all Field Effect Transistors, and to understand its characteristics, it is necessary to understand the principles of MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors or MOSFETs) and RF transistors. MOSFETs are transistors based on the principle of controlling an output current with a low power input, while RF transistors are transistors designed specifically for efficient operation at high frequencies. The BLF8G20LS-140GVQ is unique in combining the best characteristics of both types of field effect transistors.At the heart of the BLF8G20LS-140GVQ is the gate-source junction, where the two ends of the transistor meet. This junction is responsible for modulating the output current since it serves as a switch. When a positive potential is applied to the gate, current is allowed to flow between the gate and the source, increasing the amount of current that flows from the drain to the source. When the voltage at the gate is near zero, the output current is near zero. This on-off switching function is the basis for all transistor operations, including RF and MOSFET transistors.The BLF8G20LS-140GVQ is designed with a high frequency switching capability, as indicated by its designation as an RF transistor. In order to achieve this, the gate-source junction has been designed to achieve higher switching frequency than other transistors. To achieve this, the BLF8G20LS-140GVQ features a high frequency transconductance in its gate-source junction. This enables the transistor to respond with very little energy, so that it can perform operations quickly and with relatively low input power.In addition to its high frequency switching capability, the BLF8G20LS-140GVQ also features a low ON resistance and a low OFF current gate leakage. These two characteristics are necessary for ensuring efficient operation at high frequencies. Low ON resistance means that there is not much voltage drop from the gate to the source when the transistor is in the ON state, and low OFF current gate leakage means that there is no current flow when the transistor is in the OFF state. This combination of low ON resistance and low OFF current gate leakage helps to ensure that the transistor operates very efficiently at high frequencies.The BLF8G20LS-140GVQ is a versatile and powerful tool for engineers who need to manage large currents, high voltages, and signal amplifications. Its combination of low ON resistance, low OFF current gate leakage, and high frequency switching capabilities makes it a very useful RF transistor that can be used across a wide variety of applications. Its robust construction and low power consumption also make it a long-lasting and reliable component with a long operating life.
The specific data is subject to PDF, and the above content is for reference
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