BLF8G20LS-200V,112

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The BLF8G20LS-200V,112 is a member of transistors family, namely FETs, MOSFETs and RF. Being a RF MOSFET transistor, it enables RF engineers to bring great improvement to their designs. Its advantageous characteristics, such as high current gain, low-noise and high-frequency operations have made it an excellent candidate for various applications.

The BLF8G20LS-200V,112 has a variety of uses, ranging from consumer electronics, such as radio and television, to military and aerospace. Moreover, it’s highly suitable for RF amplifiers, RF switching and RF frequency controls. As a modern transistor, this device demonstrates high power rating, high-gain linearity and low gate-source capacitance, which makes it well-suited for modern design requirements.

The working principle of this transistor relies on the phenomenon of electron collective behavior. Electrons are pushed by electric current, and the electric field between the gate and the source creates a potential barrier that controls the flow of current. The silicon substrate of the transistor enables the electrons to be moved to the appropriate position, depending on the input energy. Following this process, the output energy is manipulated and regulated with the help of the gate.

The highest current rating that this FET can manage is 200V. However, it is advised to use lower voltages for better stability and power performance. Additionally, the gate-source capacitance of this MOSFET is relatively low, which allows for higher frequencies and greater output power. As for the noise figure, it goes as low as -112 dBm.

Overall, the BLF8G20LS-200V,112 is a tremendously useful RF transistor that can be used to develop a variety of products and applications. Its high power rating and gain as well as its low noise figure make it an ideal choice for a wide range of projects.

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