BSC026N02KSGAUMA1 Allicdata Electronics

BSC026N02KSGAUMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC026N02KSGAUMA1TR-ND

Manufacturer Part#:

BSC026N02KSGAUMA1

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 100A TDSON-8
More Detail: N-Channel 20V 25A (Ta), 100A (Tc) 2.8W (Ta), 78W (...
DataSheet: BSC026N02KSGAUMA1 datasheetBSC026N02KSGAUMA1 Datasheet/PDF
Quantity: 5000
1 +: $ 0.40000
10 +: $ 0.38800
100 +: $ 0.38000
1000 +: $ 0.37200
10000 +: $ 0.36000
Stock 5000Can Ship Immediately
$ 0.4
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 52.7nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC026N02KSGAUMA1 is a part of transistors, also known as field-effect transistors. It belongs to the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) family and is a type of single-source FET (Field Effect Transistor). This semiconductor device was developed to provide a voltage-controlled and low-noise electrical switch.

The BSC026N02KSGAUMA1 is often used in integrated circuits and the automotive industry. In automotive applications, it typically acts as a voltage-controlled switch and is used to control power flow between components. The device can be used in motor drivers and other power control applications. It is also used in audio amplifiers, low-voltage logic circuits, power management circuits, voltage regulators, and other control applications.

The BSC026N02KSGAUMA1 is designed for low-noise operation and features a low gate threshold voltage and low input capacitance. It also has low on-resistance and can support high voltage loads. The device is digitally controlled and provides fast switching response times. It is integrated with a standard logic level gate that can be easily interfaced with any low voltage logic gate.

The device is powered using a single power source. It has a P channel enhancement type, operates at a maximum Vgs and Vds of 20V and has a total power dissipation rating of 5W. It is also integrated with a max RDS(ON) rating of 6 mOhm up to 3.9V and has a max operating temperature of 135 degrees Celsius.

The working principle of the BSC026N02KSGAUMA1 is based on the MOSFET principle, which is a three-terminal device that uses voltage as the controlling parameter for elements. When a voltage is applied to the gate terminal, a conductive channel is formed between the source and drain, allowing a current to flow from the drain to the source. Changes in the voltage applied across the gate will cause changes in the resistance of the conducting channel, thereby allowing for voltage-controlled current flow. It is important to note that when a positive voltage is applied to the gate, the current flow increases, and when a negative voltage is applied, then the current flow is reduced.

The BSC026N02KSGAUMA1 is a popular choice for many applications due to its wide range of features and characteristics such as low noise operation, high voltage load support, and low input capacitance. Its fast switching response time make it an ideal choice for many power control applications, including automotive and integrated circuits.

The specific data is subject to PDF, and the above content is for reference

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