BSC066N06NSATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | BSC066N06NSATMA1TR-ND |
Manufacturer Part#: |
BSC066N06NSATMA1 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 64A 8TDSON |
More Detail: | N-Channel 60V 64A (Tc) 2.5W (Ta), 46W (Tc) Surface... |
DataSheet: | BSC066N06NSATMA1 Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.33880 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 3.3V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 46W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8 |
Package / Case: | 8-PowerTDFN |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.BSC066N06NSATMA1 is a type of single MOSFET, or Metal Oxide Semiconductor Field-Effect Transistor. This type of transistor has numerous applications, such as use in amplifiers, switches, and RF (radio frequency) oscillators. In this article, we will discuss the application field and working principle of this device.
Application Field of the BSC066N06NSATMA1
The BSC066N06NSATMA1 is a thermally-enhanced, low-voltage MOSFET, which means it offers excellent temperature and voltage rating capabilities. This type of transistor is usually employed in a wide array of medium-power digital and analog circuits, as it provides excellent input impedance and extremely low on-resistance. It is also capable of providing a fast switching time with low gate charge.
The BSC066N06NSATMA1 offers tremendous performance in RF (radio frequency) applications, such as wireless circuits and HF (high-frequency) communication. It can also be used in motor control applications, as well as in high-speed power switching. Due to its low threshold voltage, it is an ideal choice as an active switch in low-voltage logic circuits, such as LVC (Low Voltage CMOS) logic or TTL (Transistor-Transistor Logic). This device can also be widely used in high-voltage and low-power digital circuits.
Working Principle
The BSC066N06NSATMA1 is a single MOSFET, which means it has one metal-oxide semiconductor in it. This type of transistor works by using a metal-oxide layer, which acts as a dielectric between the metal gate and the semiconductor base. When a positive voltage is applied to the metal gate, it causes a change in the electrical potential of the metal-oxide layer, allowing carriers to move between the two sides of the metal-oxide layer. When current passes through the metal-oxide layer, it creates a current that passes through the metal gates and the semiconductor base, and thus through the MOSFET. The direction of current flow through the MOSFET is determined by the polarity of the applied voltage.
The BSC066N06NSATMA1 also has a low threshold voltage, which means it requires a smaller voltage to turn it on than other MOSFETs. This low threshold voltage makes it an ideal choice for use in low-voltage digital and analog circuits. It also features higher switching speeds and lower on-resistance, making it an ideal choice for use in high-frequency, high-speed circuits.
Conclusion
The BSC066N06NSATMA1 is a thermally-enhanced, low-voltage single MOSFET, which offers excellent temperature and voltage capabilities. It is primarily used in medium-power analog and digital circuits, as well as in RF (radio frequency) and motor control applications. It features low threshold voltage, fast switching speeds, and low on-resistance, making it ideal for use in low-voltage and high-power circuits. This device works by using a metal-oxide layer, which allows current to pass through the MOSFET when a positive voltage is applied to the metal gate.
The specific data is subject to PDF, and the above content is for reference
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