BSC079N10NSGATMA1 Discrete Semiconductor Products |
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| Allicdata Part #: | BSC079N10NSGATMA1TR-ND |
| Manufacturer Part#: |
BSC079N10NSGATMA1 |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 100A TDSON-8 |
| More Detail: | N-Channel 100V 13.4A (Ta), 100A (Tc) 156W (Tc) Sur... |
| DataSheet: | BSC079N10NSGATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 5000 +: | $ 0.77589 |
| Vgs(th) (Max) @ Id: | 4V @ 110µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TDSON-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 156W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5900pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13.4A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSC079N10NSGATMA1 application field and working principleThe BSC079N10NSGATMA1 is a N-Channel Enhancement Mode Field Effect Transistor (FET). This type of transistor is extremely helpful in a variety of applications where a power switch is necessary, as well as voltage requirements of a load. Its N-Channel formation creates a very low on-resistance, making it a popular choice for low-current applications.
The BSC079N10NSGATMA1, often referred to as a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is a device that controls the flow of power through electrical circuits. It consists of a voltage source and a field effect transistor with two metal–oxide–semiconductor layers and two terminals, the gate and the drain.
A power MOSFET has three main regions. The source, the gate and the drain. To turn the device on, a small voltage is applied between the gate and the source terminals to create an electric field across the channel, the current flow through the channel is then enhanced. The turn off process works in the opposite way.
The BSC079N10NSGATMA1 is a versatile type of power MOSFET that is suitable for a wide range of applications where reliable operation and low voltage drop-off are required. Such applications include switching power supplies, DC/DC converters, smart chargers and solar panels.
Due to its high level of flexibility and the relative simplicity of its operation, the BSC079N10NSGATMA1 is becoming increasingly more popular for low-current applications. It is also because of its small physical size, making it popular for circuits with limited space. This type of MOSFET is particularly useful for portable consumer electronics, automotive applications and even some safety circuits.
Besides its low voltage drop-off and reliability, the BSC079N10NSGATMA1 also offers protection against short-circuiting. This can be done in the form of overcurrent protection or current sense protection. This type of protection is very helpful when working with AC or DC loads with high levels of current.
The BSC079N10NSGATMA1 is available in a variety of packages and can also be used in integrated circuits. In order to get the most out of the device it is important to consider the ambient temperature of the environment and the thermal characteristics of the transistor.
Overall, the BSC079N10NSGATMA1 is an ideal choice for a variety of switching applications due to its versatile design, low on-resistance characteristics, and economical price. Its small size and efficient operation also make it a great choice for portable consumer electronics, automotive applications and safety circuits. The protection against short-circuiting also ensures its reliability in the long run.
The specific data is subject to PDF, and the above content is for reference
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BSC079N10NSGATMA1 Datasheet/PDF