BSC079N10NSGATMA1 Allicdata Electronics

BSC079N10NSGATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSC079N10NSGATMA1TR-ND

Manufacturer Part#:

BSC079N10NSGATMA1

Price: $ 0.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 100A TDSON-8
More Detail: N-Channel 100V 13.4A (Ta), 100A (Tc) 156W (Tc) Sur...
DataSheet: BSC079N10NSGATMA1 datasheetBSC079N10NSGATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.77589
Stock 1000Can Ship Immediately
$ 0.85
Specifications
Vgs(th) (Max) @ Id: 4V @ 110µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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BSC079N10NSGATMA1 application field and working principle

The BSC079N10NSGATMA1 is a N-Channel Enhancement Mode Field Effect Transistor (FET). This type of transistor is extremely helpful in a variety of applications where a power switch is necessary, as well as voltage requirements of a load. Its N-Channel formation creates a very low on-resistance, making it a popular choice for low-current applications.

The BSC079N10NSGATMA1, often referred to as a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), is a device that controls the flow of power through electrical circuits. It consists of a voltage source and a field effect transistor with two metal–oxide–semiconductor layers and two terminals, the gate and the drain.

A power MOSFET has three main regions. The source, the gate and the drain. To turn the device on, a small voltage is applied between the gate and the source terminals to create an electric field across the channel, the current flow through the channel is then enhanced. The turn off process works in the opposite way.

The BSC079N10NSGATMA1 is a versatile type of power MOSFET that is suitable for a wide range of applications where reliable operation and low voltage drop-off are required. Such applications include switching power supplies, DC/DC converters, smart chargers and solar panels.

Due to its high level of flexibility and the relative simplicity of its operation, the BSC079N10NSGATMA1 is becoming increasingly more popular for low-current applications. It is also because of its small physical size, making it popular for circuits with limited space. This type of MOSFET is particularly useful for portable consumer electronics, automotive applications and even some safety circuits.

Besides its low voltage drop-off and reliability, the BSC079N10NSGATMA1 also offers protection against short-circuiting. This can be done in the form of overcurrent protection or current sense protection. This type of protection is very helpful when working with AC or DC loads with high levels of current.

The BSC079N10NSGATMA1 is available in a variety of packages and can also be used in integrated circuits. In order to get the most out of the device it is important to consider the ambient temperature of the environment and the thermal characteristics of the transistor.

Overall, the BSC079N10NSGATMA1 is an ideal choice for a variety of switching applications due to its versatile design, low on-resistance characteristics, and economical price. Its small size and efficient operation also make it a great choice for portable consumer electronics, automotive applications and safety circuits. The protection against short-circuiting also ensures its reliability in the long run.

The specific data is subject to PDF, and the above content is for reference

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