BSC084P03NS3EGATMA1 Allicdata Electronics
Allicdata Part #:

BSC084P03NS3EGATMA1TR-ND

Manufacturer Part#:

BSC084P03NS3EGATMA1

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 14.9A TDSON-8
More Detail: P-Channel 30V 14.9A (Ta), 78.6A (Tc) 2.5W (Ta), 69...
DataSheet: BSC084P03NS3EGATMA1 datasheetBSC084P03NS3EGATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.28000
10 +: $ 0.27160
100 +: $ 0.26600
1000 +: $ 0.26040
10000 +: $ 0.25200
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 3V @ 110µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4240pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 57.7nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSC084P03NS3EGATMA1 is a type of Field Effect Transistor (FET) specifically a single insulated gate MOSFET (Metal-Oxide-Semiconductor FET) that is designed for a wide range of applications. It is designed to handle a wide range of currents and voltages, enabling it to be used in a variety of applications ranging from industrial, communications and consumer electronics.

Field Effect Transistors are three-terminal devices that have a source, a drain, and a gate. They differ from Bipolar Junction Transistors (BJTs), which also have three terminals: a collector, base and emitter. FETs are designed to act as an electrical switch that controls the current between the source and drain. They can be used to open or close the current path between the source and drain by means of an external voltage applied to the gate terminal.

The BSC084P03NS3EGATMA1 is a single insulated gate MOSFET or “IGMOS”, meaning it will only require one external electrical signal, such as a low current or logic level signal, to control a much larger current. This is achieved by utilizing an internal insulator between the gate and the source, with the voltage applied to the gate controlling whether the current will flow between the source and the drain. In a single IGMOS, the gate voltage and the source voltage must both be positive in order for current to flow between the source and drain. This process is known as “polarization” of the gate, and allows for a higher resolution of power and load current control compared to a regular FET.

The BSC084P03NS3EGATMA1 is designed with a higher power handling capability than most regular FETs. It can handle 5A-35V and is generally used to control large currents and voltages in a variety of industrial, communications and consumer electronics applications. Examples include the control of motors, dimming of lights and the control of temperature or other processes where a power regulation is required.

It is also suited for automotive, HVAC and telecom applications, and the high power handling capabilities make it suitable for applications that require high power dissipation, such as in solar inverters, AC drives and motor starters. In addition, the single IGMOS can be used in switching applications, such as audio amplifiers, rectifiers, UPS systems, and voltage converters, as it can be used to regulate the current flow with a low power switching signal.

The BSC084P03NS3EGATMA1 is an excellent choice for a variety of applications because of its high power handling capabilities, reliability and versatility. Its ability to regulate current and voltage with a low power signal makes it a cost-effective and reliable solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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