| Allicdata Part #: | BSC093N04LSGATMA1TR-ND |
| Manufacturer Part#: |
BSC093N04LSGATMA1 |
| Price: | $ 0.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 40V 49A TDSON-8 |
| More Detail: | N-Channel 40V 13A (Ta), 49A (Tc) 2.5W (Ta), 35W (T... |
| DataSheet: | BSC093N04LSGATMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.26400 |
| 10 +: | $ 0.25608 |
| 100 +: | $ 0.25080 |
| 1000 +: | $ 0.24552 |
| 10000 +: | $ 0.23760 |
| Vgs(th) (Max) @ Id: | 2V @ 14µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PG-TDSON-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 49A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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BSC093N04LSGATMA1 Application Field and Working Principle
BSC093N04LSGATMA1 is a single-source, low voltage, depletion-mode N-Channel MOSFET device from Nexperia. It is designed for a wide range of general purpose and low-voltage switching applications. It is used for switching power supply, Battery management, and automotive applications.
Features
- Static drain-source on-resistance is 3.6 ohm
- Sub-threshold slope is 400mV/decade
- Package type is PPAK
- Gate-source voltage (VGS) is 4V
- Gate-drain voltage (VGS) is 15V
- Continuous drain current is 45A
- Power dissipation is 2.32W
- Operating temperature range is -55℃ to 150℃
Application Field
The BSC093N04LSGATMA1 is suitable for a wide range of general purpose and low-voltage switching applications. It is ideal for the protection of integrated circuits from high currents and power supply from channels in switching power supply applications. It is also suitable for battery management, automotive and other low-voltage applications.
Working Principle
The BSC093N04LSGATMA1 is a single-source, low voltage, depletion-mode N-Channel MOSFET device. It operates by using a micro-electronic controlled gate. The gate of the device is used to control the flow of current across the source and drain, when a voltage is applied between the gate and source. A higher voltage between the gate and source allows a higher current to flow across the source and drain, while a lower voltage reduces it, thus allowing the user to control the flow of current with the applied voltage.
Conclusion
BSC093N04LSGATMA1 is a single-source, low voltage, depletion-mode N-Channel MOSFET device from Nexperia, designed for a wide range of general purpose and low-voltage switching applications. It is ideal for the protection of integrated circuits from high currents, Battery management, and power supply from channels in switching power supply applications. It operates by using a micro-electronic controlled gate which is used to control the flow of current across the source and drain, when a voltage is applied between the gate and source.
The specific data is subject to PDF, and the above content is for reference
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BSC093N04LSGATMA1 Datasheet/PDF