BSC093N04LSGATMA1 Allicdata Electronics
Allicdata Part #:

BSC093N04LSGATMA1TR-ND

Manufacturer Part#:

BSC093N04LSGATMA1

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 49A TDSON-8
More Detail: N-Channel 40V 13A (Ta), 49A (Tc) 2.5W (Ta), 35W (T...
DataSheet: BSC093N04LSGATMA1 datasheetBSC093N04LSGATMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.26400
10 +: $ 0.25608
100 +: $ 0.25080
1000 +: $ 0.24552
10000 +: $ 0.23760
Stock 1000Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 2V @ 14µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSC093N04LSGATMA1 Application Field and Working Principle

BSC093N04LSGATMA1 is a single-source, low voltage, depletion-mode N-Channel MOSFET device from Nexperia. It is designed for a wide range of general purpose and low-voltage switching applications. It is used for switching power supply, Battery management, and automotive applications.

Features

  • Static drain-source on-resistance is 3.6 ohm
  • Sub-threshold slope is 400mV/decade
  • Package type is PPAK
  • Gate-source voltage (VGS) is 4V
  • Gate-drain voltage (VGS) is 15V
  • Continuous drain current is 45A
  • Power dissipation is 2.32W
  • Operating temperature range is -55℃ to 150℃

Application Field

The BSC093N04LSGATMA1 is suitable for a wide range of general purpose and low-voltage switching applications. It is ideal for the protection of integrated circuits from high currents and power supply from channels in switching power supply applications. It is also suitable for battery management, automotive and other low-voltage applications.

Working Principle

The BSC093N04LSGATMA1 is a single-source, low voltage, depletion-mode N-Channel MOSFET device. It operates by using a micro-electronic controlled gate. The gate of the device is used to control the flow of current across the source and drain, when a voltage is applied between the gate and source. A higher voltage between the gate and source allows a higher current to flow across the source and drain, while a lower voltage reduces it, thus allowing the user to control the flow of current with the applied voltage.

Conclusion

BSC093N04LSGATMA1 is a single-source, low voltage, depletion-mode N-Channel MOSFET device from Nexperia, designed for a wide range of general purpose and low-voltage switching applications. It is ideal for the protection of integrated circuits from high currents, Battery management, and power supply from channels in switching power supply applications. It operates by using a micro-electronic controlled gate which is used to control the flow of current across the source and drain, when a voltage is applied between the gate and source.

The specific data is subject to PDF, and the above content is for reference

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