BUK7K12-60EX Allicdata Electronics
Allicdata Part #:

1727-1891-2-ND

Manufacturer Part#:

BUK7K12-60EX

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 60V 40A LFPAK
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 40A 68W Surfac...
DataSheet: BUK7K12-60EX datasheetBUK7K12-60EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.44600
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 617pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Description

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BUK7K12-60EX is a type of array transistor, with a source-drain blocking voltage of 60V and a drain current of 100 mA. It is a low-threshold, low-noise, low-power, low-frequency FET array transistor. BUK7K12-60EX has various application fields, mainly used in communication devices, telemetry systems, military aircraft, and civil aerospace for low noise, low power, and low frequency applications.

Application fields

BUK7K12-60EX has various application fields. In communication devices, it is mainly used in low power, low noise and low frequency applications, such as control circuits and receivers. In telemetry systems, it is used in applications involving low power, low noise, low frequency, and low sensitivity. In military aircraft, it is used in applications that require low noise, low power, and low frequency, such as data control systems. Additionally, it is also used for applications in civil aerospace, such as navigation and avionics.

Working Principle

The BUK7K12-60EX is a type of field-effect transistor array. It is composed of a pair of P-channel and N-channel devices connected in series. The P-channel device blocks the current in one direction while the N-channel device blocks the current in the opposite direction. The P-channel device is connected to a drain while the N-channel device is connected to a source. When the gate voltage of the P-channel device is greater than the gate voltage of the N-channel device, current flows from the drain to the source. With this arrangement, the BUK7K12-60EX is able to control the flow of current between the drain and the source in order to regulate the amount of power being supplied to the device.

BUK7K12-60EX has various features that make it an attractive choice for low noise, low power, and low frequency applications. It has a low-threshold voltage, which means that it can be used with lower voltages. Additionally, it has a very low gate capacitance and gate-source capacitance, which leads to reduced noise and lower power consumption. Finally, it has a low frequency operation, which makes it a good choice for applications that require a low frequency operation.

Conclusion

BUK7K12-60EX is an array transistor and it has a variety of applications in communication devices, telemetry systems, military aircraft, and civil aerospace. It is a low-threshold, low-noise, low-power, low-frequency FET array transistor that is capable of controlling the flow of current between the drain and the source. Additionally, it has a variety of features that make it attractive for low noise, low power, and low frequency applications.

The specific data is subject to PDF, and the above content is for reference

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