Allicdata Part #: | 568-9807-5-ND |
Manufacturer Part#: |
BUK7520-55A,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 54A TO220AB |
More Detail: | N-Channel 55V 54A (Tc) 118W (Tc) Through Hole TO-2... |
DataSheet: | BUK7520-55A,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 118W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1592pF @ 25V |
Vgs (Max): | ±20V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7520-55A,127 is a single low-voltage MOSFET transistor, consisting of a voltage-controlled Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). This type of transistor has a wide range of applications and works on the principle of a voltage-controlled gate dielectric. This helps to provide stable and effective electrical properties, allowing MOSFETs to serve many important functions in various electrical circuits.
MOSFET transistors are used completely three-terminal switches, where the gate-source voltage acts as the control signal that determines conduction between the drain and source terminals. They can be used for both digital and analog applications, with varying levels of capacitance and current carrying capacity. The BUK7520-55A,127 has a maximum drain current of 40 A (when used in an appropriate circuit) as well as a typical input capacitance of 1.7 pF.
This particular transistor is designed for use in very low-voltage applications, with a breakdown voltage of 6 V. This makes it ideal for use in small, low-power applications where voltage and control current calculations have to be accurate. The BUK7520-55A,127 can be used in the switching of lamps, small DC motors and other low-power devices.
In addition, the BUK7520-55A,127 can be used in logic circuits, particularly in logic level CMOS applications. An integrated MOSFET circuit can provide faster switching times, improved input/output characteristics, and improved noise immunity. In such circuits, a MOSFET can be used as both a transistor and a capacitance element.
In the current conduction process, the electric field applied across the gate dielectric creates a potential difference between the gate and the substrate. This creates a channel region in the substrate, allowing electric current to flow between the drain and source terminals. In this process, the drain-source can be switched on and off, making it controllable using the gate-controlled voltage.
The BUK7520-55A,127 is also suitable for use in linear voltage boosting circuits, where it can be used for controlling the output voltage. This is achieved by applying a control voltage between the gate and source pins, which increases the speed at which the device conducts power.
In conclusion, the BUK7520-55A,127 is a low-voltage MOSFET which is suitable for multiple applications, ranging from logic circuits to linear voltage boosting. It is highly controlled by the gate voltage and can be used to switch on and off power in a circuit. Its low-voltage breakdown voltage, along with its typical input capacitance of 1.7 pF, give it excellent properties for use in small, low-power applications.
The specific data is subject to PDF, and the above content is for reference
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