BUK725R0-40C,118 Allicdata Electronics

BUK725R0-40C,118 Discrete Semiconductor Products

Allicdata Part #:

1727-4699-2-ND

Manufacturer Part#:

BUK725R0-40C,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A DPAK
More Detail: N-Channel 40V 75A (Tc) 157W (Tc) Surface Mount DPA...
DataSheet: BUK725R0-40C,118 datasheetBUK725R0-40C,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BUK725R0-40C,118 is a transistor which is classified under transistors, FETs, MOSFETs, Single. A transistor is an inactive element used in electronic switching, charge transfer and amplification circuits. MOSFET stands for metal oxide semiconductor field effect transistor, which is more advanced than its lower powered counterparts, making it the ideal choice for many high-performance designs. The BUK725R0-40C,118 is a part of this technological development, which is why it is classified as MOSFET.

The BUK725R0-40C,118 is a single-source field effect transistor with a drain current of -40A and gate-source voltage of -25V. Its drain-source voltage is -80V, and its on-resistance is 725mΩ with a total power dissipation of 34.5W. It also has a maximum junction temperature of 150°C. This makes it ideal for applications that require high performance and power dissipation.

The transistor is also designed to handle a wide variety of applications. It is an ideal choice for motor control, power management, and power supply applications. It also works well in switching and audio applications, as it is able to handle large amounts of voltage and power.

The BUK725R0-40C,118 transistor is part of a larger family of transistors known as MOSFETs. A MOSFET is a metal oxide semiconductor field effect transistor, which is designed to operate at higher power levels than traditional transistors. The main benefit of a MOSFET is that it is able to produce very high levels of power. In addition, MOSFETs are low-voltage devices and have low power dissipation requirements.

The working principle of the BUK725R0-40C,118 is relatively simple. Essentially, the transistor has an input (the gate) and an output (the drain). When a voltage is applied to the gate, the transistor will turn on and allow current to flow from the drain to the source. This current is controlled by the gate-source voltage, which is the amount of voltage used to turn the transistor on. As the gate-source voltage increases, more current will flow through the transistor. Conversely, as the gate-source voltage decreases, less current will flow through the transistor.

The BUK725R0-40C,118 is a highly versatile and powerful transistor that is designed to handle a wide variety of applications. Its extensive power handling capabilities make it an ideal choice for motor control, power management and power supply applications. Its low power dissipation requirements also make it well suited for switching and audio applications. The working principle of the BUK725R0-40C,118 transistor is relatively simple and easy to understand, making it an ideal choice for many different projects.

The specific data is subject to PDF, and the above content is for reference

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