Allicdata Part #: | BUK7907-40ATC,127-ND |
Manufacturer Part#: |
BUK7907-40ATC,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A TO220AB |
More Detail: | N-Channel 40V 75A (Tc) 272W (Tc) Through Hole TO-2... |
DataSheet: | BUK7907-40ATC,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-5 |
Supplier Device Package: | TO-220-5 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 272W (Tc) |
FET Feature: | Temperature Sensing Diode |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 108nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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BUK7907-40ATC,127 Application Field and Working Principle
Discrete power semiconductor devices, such as BUK7907-40ATC,127, represent a key component of wide range of industry and electronics systems. This article will provide an overview of BUK7907-40ATC,127, its application field and its working principle.
BUK7907-40ATC,127 belongs to a family of devices known as metal-oxide-semiconductor field-effect transistors (MOSFETs). MOSFETs are essentially voltage-controlled switches, which can be used to control the amount of current flowing through a circuit. BUK7907-40ATC,127 is a single-channel, n-type MOSFET. It features an enhanced low RDS(on) of 0.078Ω, giving it excellent power efficiency, and can handle maximum power dissipation of up to 15W, making it a great solution for power-conserving designs.
The most common application for BUK7907-40ATC,127 is in the field of power converters. Power converters are used to convert direct current (DC) into alternating current (AC). By using this MOSFET, designers can quickly and efficiently design power converters that can both increase and decrease the voltage of an electrical device. Such power converters are often found in applications such as solar energy storage systems, renewable energy converters, or motor control systems.
In addition to power converters, BUK7907-40ATC,127 can also be used in other applications such as power switching, motor control and driving, high side switch in power distribution, and as a switch in DC-DC converters. As this MOSFET can handle high power dissipation and has low RDS(on), it is an ideal choice for high-power applications.
The basic working principle of BUK7907-40ATC,127 is quite simple. Whenever a voltage is applied to the gate-source terminals, an electric field is created at the gate-source interface. This causes a channel to be created between the source and drain of the device, allowing current to flow from the source to the drain.
When the voltage is removed from the gate-source terminals, the electric field is eliminated, and the channel is closed, preventing current flow from the source to the drain. By controlling the voltage applied to the gate-source terminals, current through the device can be regulated, which is a characteristic of this type of MOSFET.
BUK7907-40ATC,127 is a versatile MOSFET, which can be used in a variety of applications. Its low RDS(on) and high power dissipation capability make it a great choice for designers who need an efficient and reliable power switch. By understanding the working principle of BUK7907-40ATC,127, it is possible to design high-power circuits with minimal power dissipation.
In conclusion, BUK7907-40ATC,127 is a n-channel MOSFET with an enhanced low RDS(on), ideal for applications such as power converters, power switching, motor control and driving, and high side switch in power distribution. Its working principle is based on the manipulation of electric fields, which can be used to open and close the channel between the source and drain of the device.
The specific data is subject to PDF, and the above content is for reference
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