BUK7620-100A,118 Discrete Semiconductor Products

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The BUK7620-100A is a high power, low on-state resistance, MOSFET designed for usage in applications that require high efficiency and involving heavy mechanical or electrical loads. It has been called the "ultimate switching transistor" due to its superior abilities. It is a vertical single-gate insulated-gate bipolar transistor (IGBT) which operates through modern silicon-controlled rectifier (SCR) technology. The BUK7620-100A is suitable for a wide range of power conversion applications, including AC/DC and DC/DC converters, motor drives, and more. Its main advantage over standard MOSFETs is its low on-state resistance and high-power handling.

The BUK7620-100A is used in a variety of applications, such as AC/DC and DC/DC converters, motor drives, high-power switching applications, and more. It is also suitable for high-current applications such as charged battery chargers and continuous current sources. Additionally, it can be used in industrial automation applications, such as solenoid valves, contactors, relays, UPS systems, and more. The device can also be used in automotive applications, such as light weight elimination devices, fuel cell inverters, and electronic power steering.

The BUK7620-100A is designed to ensure high dynamic performance. It is made of a robust IGBT with an optimized power semiconductor material. The device has a low gate charge, a low internal resistance, and a high current rating. The device also features integrated protection circuitry, which helps to protect against over-voltage and over-current conditions. In addition, it is equipped with short circuit protection, thermal shutdown protection, and a soft start option.

The main feature of the BUK7620-100A is its low on-state resistance. This feature helps reduce conduction losses in applications involving heavy electrical or mechanical loads. It also helps improve the efficiency of the device. Additionally, its high current rating allows the device to handle high power efficiently. In terms of its thermal characteristics, the device features a high thermal impedance rating and a low junction temperature.

The working principle of the BUK7620-100A is quite simple. When a gate signal is applied to the device, it creates an electric field across the narrow gap of the device. This electric field increases current flow in the gate and causes a further increase in the gate-source voltage. This triggers the MOSFET to turn on and produces a high current at the drain. The device also has integrated protection circuitry, which assists in the safe operation of the device under over-voltage and over-current conditions.

In short, the BUK7620-100A is a high power, low on-state resistance MOSFET designed for high-efficiency applications. Its low on-state resistance helps reduce power losses in applications involving heavy electrical or mechanical loads. In addition, its integrated protection circuitry helps to protect the device against over-voltage and over-current conditions. The device is suitable for a wide range of applications, including AC/DC and DC/DC converters, motor drives, industrial automation, automotive, and more. Thanks to its robust structure, high current rating, and low on-state resistance, the BUK7620-100A is certainly the ultimate switching transistor.

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