BUK7109-75AIE,118 Discrete Semiconductor Products |
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Allicdata Part #: | 568-9630-2-ND |
Manufacturer Part#: |
BUK7109-75AIE,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 75V 75A D2PAK |
More Detail: | N-Channel 75V 75A (Tc) 272W (Tc) Surface Mount SOT... |
DataSheet: | BUK7109-75AIE,118 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 121nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 25V |
FET Feature: | Current Sensing |
Power Dissipation (Max): | 272W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-426 |
Package / Case: | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.The BUK7109-75AIE,118 is a type of single transistor used in a wide variety of applications. It is classified under transistors- FETs, MOSFETs- Singles. A transistor is a type of semiconductor device which is able to regulate power, voltage and current flow between two points through an external control signal. MOSFETs (metalloxide-semiconductor field-effect transistors) are transistors that are used to create specialized electronic switching devices.
The BUK7109-75AIE,118 is a type of N-channel enhancement type depletion mode MOSFET. It allows the device to handle high current and voltage along with having low on-state resistance. The rated drain current (Id) for the BUK7109-75AIE,118 is rated at 90A and the drain source voltage (Vds) is 75V. It features fast switching time with a high output current capability due to its internal N-channel structure. The device also features a wide range of gate-source voltage (Vgs) that ranges from -30V to 10V.
The BUK7109-75AIE,118 has a variety of applications such as switching, motor control, power supply, motor and inverter control, and voltage regulators. It is used mainly as a switching device to switch high voltage and/or high current circuits. It is also used in high frequency applications where a fast switching device is needed. The device can also be used in applications where a high temperature operating environment is required.
The working principle of the BUK7109-75AIE,118 is based on the principle of MOSFETs whereby the gate voltage changes the conductivity between the source and drain terminals. When a high voltage signal is applied to the gate-source terminals, the MOSFET acts as an amplifier and increases the current between the drain and source terminals. This is because an increase in the channel width between the source and drain terminals due to an increase in the gate voltage causes a decrease in the resistance between these two terminals resulting in a higher output current. Similarly, a decrease in the gate voltage will cause the channel width and hence the resistance to decrease and hence current to increase. Thus, the BUK7109-75AIE,118 can be used to switch, amplify or control current and voltage.
The BUK7109-75AIE,118 is a robust transistor that can be used for a variety of applications. It is suitable for high current and voltage applications and is able to handle a wide range of gate-source voltage. The device has a fast switching time and a wide range of operating temperatures. Thus, it is suitable for a variety of applications such as switching, motor control, power supply, motor and inverter control, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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