BUK7613-60E,118 Allicdata Electronics

BUK7613-60E,118 Discrete Semiconductor Products

Allicdata Part #:

1727-7250-2-ND

Manufacturer Part#:

BUK7613-60E,118

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 58A D2PAK
More Detail: N-Channel 60V 58A (Tc) 96W (Tc) Surface Mount D2PA...
DataSheet: BUK7613-60E,118 datasheetBUK7613-60E,118 Datasheet/PDF
Quantity: 1000
800 +: $ 0.39363
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 96W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK7613-60E,118 is a component of the category of transistors, FETs and MOSFETs, applicable in a single type of component. This component is a transistor (field-effect transistor), a semiconductor component with three terminals that is used to control the flow of electric current. The device can either be ‘on’ or ‘off’, which is determined by the application of a gate voltage. This gate voltage can control the resistance between the two other terminals, hence controlling the current that passes through it.

This component has a single polarity, meaning that its pins are not interchangeable. It is significantly more efficient than traditional bipolar transistors, due to its low power consumption. This feature of reduced power usage makes it ideal for applications that require high power to be available with minimum dissipation.

It is made from Si-N technology, which is employed in the construction of integrated circuits, consisting of N- and P-type materials to form a junction structure. This type of semiconductor structure is found to be highly stable in different environments and conditions, an important factor when dealing with highly precise current or voltage levels.

The BUK7613-60E,118 is used in a wide range of applications and is an excellent option for smaller power needs. It can be used in audio amplifiers, power transistors, switching circuits, logic drive elements and other electronic applications. It is also widely employed in the automotive industry, mainly as a replacement of generic transistors.

The BUK7613-60E,118’s working principle is based on the transistor-switching properties of P-type and N-type materials. When a voltage is applied to the gate terminal, it creates a depression region that pulls electrons into it, thus forming a depletion zone. This zone acts as an insulator and a barrier between the source and drain regions, thereby blocking the current from passing through. By adjusting the voltage of the gate, the barrier can be opened or closed, thereby controlling the current flow.

The BUK7613-60E,118 is an ideal component for many applications, due to its robust design, low power consumption and wide range of applications. Its simple but effective working principle, allowing precise control of current with minimum power dissipation, is highly valued in many applications. Thanks to its design and modern construction, the BUK7613-60E,118 is increasingly becoming the popular choice in audio, automotive and other electronic applications.

The specific data is subject to PDF, and the above content is for reference

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