BUK7K15-80EX

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The BUK7K15-80EX is an array of insulated-gate bipolar transistors (IGBTs) designed for high-voltage switching applications. This device is ideal for use in applications where higher switching speeds and improved noise immunity are required, such as medical devices, welding equipment and industrial motor drives. With its optimized capability for voltage turn-on and efficient operation, the BUK7K15-80EX provides reliable performance for all of these applications.

The BUK7K15-80EX is a technology first developed by Infineon technologies that uses advanced Field-Effect Transistor (FET) structures with N-channel MOS transistors cross-coupled in series. This structure allows the device to have a wide operational voltage range combined with a low total gate charge, as well as improved switching speed and noise immunity.

The BUK7K15-80EX has a maximum operating voltage of 800V and a minimum breakover voltage of 600V, which makes it suitable for applications with high switching requirements such as those found in medical devices or welding equipment. The device also features a fast switching speed of up to 200 ns, providing for improved system performance and high power efficiency. The device also features a low total gate charge of only 16 nC, which ensures low power dissipation and high performance.

The BUK7K15-80EX is a proven and dependable device for high-voltage operation and is typically used in applications that require high switching speeds and noise immunity. The device is ideal for medical equipment, welding equipment and industrial motor drives. The device is available in a variety of packages and can be used in a variety of applications, from automotive to consumer electronics, due to its low power dissipation and fast switching speed.

The particular application of the BUK7K15-80EX is also affected by its working principle. This is a voltage mode device, meaning it relies on the application of a voltage to trigger the switching of the device. The BUK7K15-80EX is designed to allow a current flow between the drain and source electrodes of the device when the voltage across those electrodes reaches a certain threshold, known as the turn-on voltage. When the voltage falls below the turn-off voltage, the current stops flowing, and the device returns to its off-state.

In addition to its efficient operation, the BUK7K15-80EX also offers improved noise immunity compared to traditional devices. The insulated gate structure of the BUK7K15-80EX reduces the susceptibility to noise caused by electrical spikes, both on the input and output sides of the device. This feature allows the device to be used with greater reliability in environments where noise is a concern.

In conclusion, the BUK7K15-80EX is an array of insulated gate bipolar transistors (IGBTs) designed for high-voltage switching applications. Its optimized capabilities for voltage turn-on and efficient operation make it suitable for applications such as medical equipment, welding equipment and industrial motor drives, while its low total gate charge and fast switching speed make it suitable for a variety of applications. Its working principle allows it to rely on the application of a voltage to trigger the switching of the device and its insulated gate structure reduces the susceptibility to noise. As a result, the BUK7K15-80EX provides reliable performance in a wide variety of applications.

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