BUK7J1R4-40HX Allicdata Electronics

BUK7J1R4-40HX Discrete Semiconductor Products

Allicdata Part #:

1727-7419-2-ND

Manufacturer Part#:

BUK7J1R4-40HX

Price: $ 0.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 120A LFPAK56
More Detail: N-Channel 40V 120A (Ta) 395W (Ta) Surface Mount LF...
DataSheet: BUK7J1R4-40HX datasheetBUK7J1R4-40HX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.69471
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 8155pF @ 25V
FET Feature: --
Power Dissipation (Max): 395W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SOT-1023, 4-LFPAK
Description

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The BUK7J1R4-40HX is a power MOSFET (metal-oxide-semiconductor field-effect transistor) that is typically used for load switching and has been designed for optimal performance in power processing applications such as motor control, power supply, lighting systems, industrial and home appliances. This type of transistor utilizes voltage as the primary control element to regulate the flow of current, allowing it to be used in both high-current and low-current applications.

This MOSFET has a three-gate structure and is composed of two N-channel, interconnected JFETs (junction field-effect transistors). As with other transistor types, the BUK7J1R4-40HX has two operating modes: enhancement mode and depletion mode. During enhancement mode, a positive-polarity voltage is applied to the gate terminal and the channel between the source and the drain is filled with electrons that form a conducting channel which allows current to pass through. In depletion mode, a negative-polarity voltage is applied to the gate terminal and the channels between the source and drain are depleted of electrons which results in an off-state.

The BUK7J1R4-40HX is designed to provide superior switching performance, high current carrying capacity and excellent power dissipation capabilities. It is rated for an operating temperature of up to 175°C, a maximum drain current of 40A, a drain-source voltage of 600V and an avalanche rating of 400V. It also features a low on-resistance which minimizes power losses and enhances thermal transfer properties, allowing it to be used in high-efficiency, high-power applications. It has a high switching speed, allowing complex power loads to be switched quickly and efficiently. The device is offered in a TO-264 SMD or through-hole mounting configuration.

The BUK7J1R4-40HX is an excellent choice for applications requiring high-voltage, high-current load switching capabilities. It is ideal for applications such as motor control, voltage regulation, power supply, lighting systems, automotive and home appliances. Its high performance, high current carrying capacity, low on-resistance and high switching speed make it a versatile device that can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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