BUK7M10-40EX Discrete Semiconductor Products

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The BUK7M10-40EX is a single P-Channel Enhancement Mode Field Effect Transistor (FETs) that has a high current capacity and load potential and is highly dependable, making it suitable for a wide range of applications. With its high-temperature performance, low gate-source capacitances and low on-resistance, the BUK7M10-40EX is an ideal choice for many applications in many industries including automotive, aviation, machine control and data processing.

Overall Rating

The BUK7M10-40EX is rated for a maximum drain current of 10 Amps and a drain source voltage of up to 40 Volts. It has Bychannel ESD ratings of 2kV, making it suitable for use in high-reliability applications. The high junction temperature of 175oC allows the device to withstand more extreme temperatures and ramp up times, making it suitable for more high-temp applications. The channel width is rated at 0.66mm and has a high breakdown voltage of 40V.

Types of Applications

The BUK7M10-40EX is suitable for a variety of applications in the automotive, aviation, consumer electronics, machine control and data processing industries. Its high current capacity and load potential makes it suitable for buck/boost converters, motor controls, and power supply applications. It can also be used in microcontrollers and digital logic switches. Its low gate-source capacitances and low on-resistance make the device suitable for power management, such as in DC-DC converters and power supply switching, as well as for applications where high-temperature performance is required.

Working Principle

The working principle of the BUK7M10-40EX is based on a field-effect transistor (FET) which is a type of transistor that utilizes a gate, source and drain contacts to control the flow of electrons and modify the overall electrical characteristics of the device. The drain current that occurs when an external voltage is applied to the gate terminal, will determine the electrical characteristics. FETs are typically used as switching devices since they can be very quickly turned on and off and exhibit low power requirements.

In the case of this device, because it is a P-Channel Enhancement Mode FET, it can be controlled via a gate voltage, which when applied, essentially “Turns On” the transistor. The higher the voltage is increased, the higher the current flowing through the device and the lower its breakdown voltage becomes, further increasing its power handling capability. The low gate-source capacitances and low on-resistance makes the BUK7M10-40EX ideal for its various uses in the automotive, aviation and consumer electronics industry.

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