BUK763R9-60E,118

The BUK763R9-60E is a single-pole, double-throw (SPDT) semiconductor switch, a member of the Metal-oxide Semiconductor Field Effect Transistor (MOSFET) family of transistors. It is a low-capacitance, low on-state drain-to-source resistance (RDS) transistor and is built using a top-notch silicon CMOS process. This device is suitable for use in a wide range of digital and analog switching applications, such as signal switching, signal routing and signal distribution.

The major component of the BUK763R9-60E is the gate, which serves as the control element of the device. The gate is driven by an external signal source, such as a voltage source, to control the flow of current through the drain and source terminals. A positive gate voltage increases the conductivity between the drain and source, while a negative gate voltage decreases the conductivity. This is known as the field-effect, or voltage-controlled, mode of operation.

The BUK763R9-60E is engineered for very high frequency (VHF) applications, and it operates from a drain-source voltage range of –60 V to +60 V with a gate-source voltage range of –20 V to +20 V. It also provides an excellent combination of low on-state resistance (RDS(on)), low input capacitance (Ciss), and low gate-charge (Qg) with low power consumption (105 mW(max)) and excellent noise rejection capability.

The BUK763R9-60E is typically used in the following applications. Firstly, in telecommunications, it can be utilized for switches, clock distribution, and general-purpose switching applications. Secondly, in computers, it is used in power-control and signal-routing functions like in Ethernet switches, Ethernet bridges, and peripherals. Lastly, in automotive applications, it is often employed for fuel injectors, engine control systems, oil/air conditioner controls, and other safety-related functions.

In conclusion, the BUK763R9-60E is a single-pole, double-throw (SPDT) transistor, specifically designed for use in a wide variety of digital and analog switching applications. With its low on-state resistance (RDS(on)), low input capacitance (Ciss), and low gate-charge (Qg), the BUK763R9-60E offers excellent combination of high performance characteristics, low power consumption, and superior noise rejection capability.